Datasheet > US2AF-SOT-23

US2AF-SOT-23

更新时间： 2024-11-19 01:25:59

品牌	Logo	应用领域
海德 - HDSEMI		/
页数	文件大小	规格书
4页	1368K
描述
SMAF Plastic-Encapsulate Diodes

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中文翻译

获取价格

数据手册

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US2AF-SOT-23 数据手册

US2AF THRU US2MF

HD AF56

SMAF Plastic-Encapsulate Diodes

High Efficient Rectifier

Features

●I

50V-1000V

●High surge current capability

SMAF

●VRRM

Glass passivated chip

●

Polarity: Color band denotes cathode

Applications

●Rectifier

Marking

● US2AF-US2MF : US2A-US2M

US2

Item

Symbol Unit

Test Conditions

AF BF DF FF GF JF KF MF

V_RRM

50 100 200 300 400 600 800 1000

Repetitive Peak Reverse Voltage

70 140

210 280 420 560 700

Maximum RMS Voltage

RMS

60HZ Half-sine wave, Resistance

Average Forward Current

I_F(AV)

2.0

load, TL =110℃

60Hz Half-sine wave ,1 cycle ,

Surge(Non-repetitive)Forward

Current

I_FSM

Ta =25℃

Junction Temperature

Storage Temperature

T_J

℃

-55~+150

T_STG

Electrical Characteristics (T =25℃ Unless otherwise specified）

US2

Item

Symbol

Unit

Test Condition

AF BF DF FF GF JF KF MF

V_F

I_F=2.0A

Peak Forward Voltage

1.0

1.3

1.7

Maximum reverse recovery

time

t_rr

I_F=0.5A,I_R=1.0A,I_rr=0.25A

I_RRM1

I_RRM2

T =25℃

5.0

Peak Reverse Current

μA

V_RM=V_RRM

T =100℃

100

80¹⁾

20¹⁾

R_θ

Between junction and ambient

Between junction and terminal

J-A

Thermal

℃/W

Resistance(Typical)

R_θ

J-L

Notes:

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper

pad areas

igh Diode Semiconductor

12 3 4

中文翻译

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