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US1KE-TP-HF PDF预览

US1KE-TP-HF

更新时间: 2024-11-15 20:51:15
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
4页 225K
描述
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, SMAE, 2 PIN

US1KE-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:SMAE, 2 PINReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.56配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-C2湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大重复峰值反向电压:800 V
最大反向恢复时间:0.075 µs表面贴装:YES
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

US1KE-TP-HF 数据手册

 浏览型号US1KE-TP-HF的Datasheet PDF文件第2页浏览型号US1KE-TP-HF的Datasheet PDF文件第3页浏览型号US1KE-TP-HF的Datasheet PDF文件第4页 
M C C  
US1AE  
THRU  
US1ME  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Micro Commercial Components  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Features  
Halogen free available upon request by adding suffix "-HF"  
Ultra Fast Switching For High Efficiency  
1 Amp Ultra Fast  
Rectifier  
50 to 1000 Volts  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
For Surface Mounted Applications  
Low Forward Voltage Drop And High Current Capability  
Low Reverse Leakage Current  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
·
·
Maximum Ratings  
Lead Free Finish/RoHS Compliant(NOTE 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
(SMAE)  
Operating Temperature: -50°C to +150°C  
Storage Temperature: -50°C to +150°C  
H
Maximum Thermal Resistance; 30°C/W Junction To Lead  
Cathode Band  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum  
RMS  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
50V  
100V  
150V  
200V  
400V  
600V  
800V  
1000V  
J
US1AE  
US1BE  
US1CE  
US1DE  
US1GE  
US1JE  
US1KE  
US1ME  
US1A  
US1B  
US1C  
US1D  
US1G  
US1J  
US1K  
US1M  
35V  
70V  
100V  
150V  
200V  
400V  
600V  
800V  
1000V  
105V  
140V  
280V  
420V  
560V  
700V  
A
C
E
D
B
G
DIMENSIONS  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
INCHES  
MIN  
.079  
.050  
.002  
---  
MM  
MIN  
Average Forward  
Current  
IF(AV)  
1.0A  
TL = 110°C  
DIM  
A
MAX  
.096  
.075  
.008  
.02  
MAX  
2.44  
1.90  
.20  
NOTE  
2.01  
1.27  
.05  
B
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
C
D
---  
.51  
E
.030  
.189  
.157  
.090  
.060  
.208  
.180  
.115  
.76  
1.52  
5.30  
4.57  
2.92  
G
H
4.80  
4.00  
2.29  
Maximum  
J
Instantaneous  
Forward Voltage  
US1AE-1DE  
US1GE  
SUGGESTED SOLDER  
PAD LAYOUT  
0.090”  
VF  
1.0V  
1.4V  
1.7V  
IFM = 1.0A;  
TJ = 25°C  
US1JE-1ME  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
IR  
10uA  
100uA  
TA = 25°C  
TA = 100°C  
0.085”  
Maximum Reverse  
Recovery Time  
0.070”  
Trr  
CJ  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
50ns  
US1AE-1GE  
75ns  
US1JE-1ME  
Typical Junction  
Capacitance  
US1AE-1GE  
US1JE-1ME  
20pF  
17pF  
Measured at  
1.0MHz, VR=4.0V  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7  
www.mccsemi.com  
Revision: C  
2014/01/14  
1 of 4  

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