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US1K-HE3/5AT PDF预览

US1K-HE3/5AT

更新时间: 2024-11-15 20:43:19
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
5页 93K
描述
1A, 800V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

US1K-HE3/5AT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:compliant风险等级:5.24
其他特性:FREE WHEELING DIODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:800 V最大反向恢复时间:0.075 µs
表面贴装:YES端子面层:MATTE TIN
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

US1K-HE3/5AT 数据手册

 浏览型号US1K-HE3/5AT的Datasheet PDF文件第2页浏览型号US1K-HE3/5AT的Datasheet PDF文件第3页浏览型号US1K-HE3/5AT的Datasheet PDF文件第4页浏览型号US1K-HE3/5AT的Datasheet PDF文件第5页 
US1A thru US1M  
Vishay General Semiconductor  
Surface Mount Ultrafast Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Ultrafast reverse recovery time  
• Low switching losses, high efficiency  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
DO-214AC (SMA)  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high frequency rectification and  
freewheeling application in switching mode converters  
and inverters for consumer, computer, automotive and  
telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
VRRM  
IFSM  
trr  
50 V to 1000 V  
30 A  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
50 ns, 75 ns  
1.0 V, 1.7 V  
150 °C  
VF  
TJ max.  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL US1A US1B US1D US1G US1J US1K US1M  
UNIT  
Device marking code  
UA  
50  
35  
50  
UB  
100  
70  
UD  
200  
140  
200  
UG  
400  
280  
400  
1.0  
UJ  
UK  
800  
560  
800  
UM  
1000  
700  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
600  
420  
600  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TL = 110 °C  
100  
1000  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
30  
A
Operating and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number: 88768  
Revision: 27-Aug-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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