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US1DHE3/61T PDF预览

US1DHE3/61T

更新时间: 2024-11-09 21:14:43
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
5页 79K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

US1DHE3/61T 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:DO-214AC
包装说明:ROHS COMPLIANT, PLASTIC, SMA, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.01
Is Samacsys:N其他特性:FREE WHEELING DIODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

US1DHE3/61T 数据手册

 浏览型号US1DHE3/61T的Datasheet PDF文件第2页浏览型号US1DHE3/61T的Datasheet PDF文件第3页浏览型号US1DHE3/61T的Datasheet PDF文件第4页浏览型号US1DHE3/61T的Datasheet PDF文件第5页 
US1A, US1B, US1D, US1G, US1J, US1K, US1M  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount Ultrafast Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Ultrafast reverse recovery time  
• Low switching losses, high efficiency  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
DO-214AC (SMA)  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in high frequency rectification and freewheeling  
application in switching mode converters and inverters for  
consumer, computer, automotive, and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
MECHANICAL DATA  
IFSM  
trr  
30 A  
50 ns, 75 ns  
1.0 V, 1.7 V  
150 °C  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
VF at IF  
Base P/N-E3  
Base P/NHE3  
-
-
RoHS-compliant, commercial grade  
RoHS-compliant, automotive grade  
TJ max.  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, .....)  
Package  
Diode variations  
DO-214AC (SMA)  
Single die  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT  
Device marking code  
UA  
50  
35  
50  
UB  
100  
70  
UD  
200  
140  
200  
UG  
400  
280  
400  
1.0  
UJ  
UK  
800  
560  
800  
UM  
1000  
700  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
600  
420  
600  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TL = 110 °C  
100  
1000  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
30  
A
Operating and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Revision: 30-Oct-13  
Document Number: 88768  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

US1DHE3/61T 替代型号

型号 品牌 替代类型 描述 数据表
US1DHE3_A/H VISHAY

类似代替

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
US1DHE3/5AT VISHAY

类似代替

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, S
US1D-E3/61T VISHAY

功能相似

DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Si

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