Preliminary Data Sheet
μPD5902T7K
CMOS Integrated Circuits High Power SPDT Switch
R09DS0046EJ0200
Rev.2.00
Nov 19, 2012
DESCRIPTION
The μPD5902T7K is a CMOS MMIC SPDT (Single Pole Double Throw) switch for GSM and UMTS/LTE main
Antenna switching and other High Power RF switching applications up to +35 dBm.
This device can operate frequency from 0.05 to 6.0 GHz, having low insertion loss and high isolation.
This device is housed in a 12-pin plastic QFN (Quad Flat Non-Leaded) (T7K) package.
FEATURES
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Low control voltage
Low insertion loss
High isolation
: Vcont = 1.3 V MIN., VDD = 2.3 V MIN.
: Lins = 0.35/0.40 dB TYP. @ f = 1.0/2.0 GHz
: ISL = 45/37 dB TYP. @ f = 1.0/2.0 GHz
: Pin (0.1dB) = +38 dBm TYP. @f = 0.9/2.0 GHz
High Handling power
High-density surface mounting : 12-pin plastic QFN (T7K) package (2.0 × 2.0 × 0.6 mm)
No DC blocking capacitors required.
APPLICATIONS
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GSM and UMTS/LTE main Antenna switching etc.
Other RF switching Applications.
Antenna tuning Applications.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
μPD5902T7K-E2 μPD5902T7K-E2-A 12-pin plastic
5902
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Embossed tape 8 mm wide
Pin 10, 11 and 12 face the perforation side
of the tape
QFN (T7K)
(Pb-Free)
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Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPD5902T7K-A
CAUTION
Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this
device. This device must be protected at all times from ESD. Static charges may easily produce potentials of
several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard
ESD precautions must be employed at all times.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0046EJ0200 Rev.2.00
Nov 19, 2012
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