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UPD488588FF-C60-53-DH1 PDF预览

UPD488588FF-C60-53-DH1

更新时间: 2024-11-19 23:40:19
品牌 Logo 应用领域
其他 - ETC 动态存储器
页数 文件大小 规格书
79页 1082K
描述
RAMBUS DRAM

UPD488588FF-C60-53-DH1 数据手册

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DATA SHEET  
288M bits Direct Rambus DRAM  
µPD488588 (512K words × 18 bits × 32s banks)  
Description  
Features  
The Direct Rambus DRAM (Direct RDRAM) is a  
general purpose high-performance memory device  
suitable for use in a broad range of applications  
including computer memory, graphics, video, and any  
other application where high bandwidth and low  
latency are required.  
Highest sustained bandwidth per DRAM device  
— 1.6 GB/s sustained data transfer rate  
— Separate control and data buses for maximized  
efficiency  
— Separate row and column control buses for easy  
scheduling and highest performance  
The µPD488588 is 288Mbits Direct Rambus DRAM  
(RDRAM), organized as 16M words by 18 bits.  
— 32 banks: four transactions can take place  
simultaneously at full bandwidth data rates  
The use of Rambus Signaling Level (RSL) technology  
permits 600MHz to 800MHz transfer rates while using  
conventional system and board design technologies.  
Direct RDRAM devices are capable of sustained data  
transfers at 1.25ns per two bytes (10ns per sixteen  
bytes).  
Low latency features  
— Write buffer to reduce read latency  
— 3 precharge mechanisms for controller flexibility  
— Interleaved transactions  
Advanced power management:  
— Multiple low power states allows flexibility in power  
consumption versus time to active state  
The architecture of the Direct RDRAMs allows the  
highest sustained bandwidth for multiple, simultaneous  
randomly addressed memory transactions.  
The separate control and data buses with independent  
row and column control yield over 95% bus efficiency.  
The Direct RDRAM’s four banks support up to four  
simultaneous transactions.  
— Power-down self-refresh  
Overdrive current mode  
Organization: 2K bytes pages and 32 banks, x 18  
Uses Rambus Signaling Level (RSL) for up to  
800MHz operation  
Package : 80-pin TAPE FBGA (µBGA)  
System oriented features for mobile, graphics and  
large memory systems include power management,  
byte masking.  
The µPD488588 is offered in a CSP horizontal  
package suitable for desktop as well as low-profile  
add-in card and mobile applications. Direct RDRAMs  
operate from a 2.5V supply.  
Document No. E0039E20 (Ver. 2.0)  
Date Published December 2001 (K) Japan  
URL: http://www.elpida.com  
C
Elpida Memory, Inc. 2001  
NEC Corporation 2000  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

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