UPD4482321GF-A85Y

更新时间： 2024-11-09 13:01:07

品牌	Logo	应用领域
日电电子 - NEC		静态存储器
页数	文件大小	规格书
28页	367K
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UPD4482321GF-A85Y 数据手册

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DATA SHEET

MOS INTEGRATED CIRCUIT

PD4482161, 4482181, 4482321, 4482361

8M-BIT CMOS SYNCHRONOUS FAST SRAM

FLOW THROUGH OPERATION

Description

The µPD4482161 is a 524,288-word by 16-bit, the µPD4482181 is a 524,288-word by 18-bit, the µPD4482321 is a

262,144-word by 32-bit and the µPD4482361 is a 262,144-word by 36-bit synchronous static RAM fabricated with

advanced CMOS technology using Full-CMOS six-transistor memory cell.

The µPD4482161, µPD4482181, µPD4482321 and µPD4482361 integrate unique synchronous peripheral circuitry, 2-bit

burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single

clock input (CLK).

The µPD4482161, µPD4482181, µPD4482321 and µPD4482361 are suitable for applications which require synchronous

operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer memory.

ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In

the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal operation.

The µPD4482161, µPD4482181, µPD4482321 and µPD4482361 are packaged in 100-pin PLASTIC LQFP with a 1.4

mm package thickness for high density and low capacitive loading.

Features

• 3.3 V or 2.5 V core supply

• Synchronous operation

• Operating temperature : T_A= 0 to 70 °C (-A65, -A75, -A85, -C75, -C85)

T_A= −40 to +85 °C (-A65Y, -A75Y, -A85Y, -C75Y, -C85Y)

• Internally self-timed write control

• Burst read / write : Interleaved burst and linear burst sequence

• Fully registered inputs for flow through operation

• All registers triggered off positive clock edge

• 3.3 V or 2.5 V LVTTL Compatible : All inputs and outputs

• Fast clock access time : 6.5 ns (133 MHz), 7.5 ns (117 MHz), 8.5 ns (100 MHz)

• Asynchronous output enable : /G

• Burst sequence selectable : MODE

• Sleep mode : ZZ (ZZ = Open or Low : Normal operation)

• Separate byte write enable : /BW1 to /BW4, /BWE (µPD4482321, µPD4482361)

/BW1, /BW2, /BWE (µPD4482161, µPD4482181)

Global write enable : /GW

• Three chip enables for easy depth expansion

• Common I/O using three state outputs

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M14521EJ3V0DS00 (3rd edition)

Date Published December 2002 NS CP(K)

Printed in Japan

The mark shows major revised points.

2000

12 3 4 5 6 7...28

中文翻译

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与UPD4482321GF-A85Y相关器件

型号	品牌	获取价格	描述	数据表
UPD4482321GF-A85Y-A	NEC	获取价格	Cache SRAM, 256KX32, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482321GF-C75	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION
UPD4482321GF-C75-A	NEC	获取价格	Cache SRAM, 256KX32, 7.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482321GF-C75Y	NEC	获取价格	Cache SRAM, 256KX32, 7.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482321GF-C75Y-A	NEC	获取价格	Cache SRAM, 256KX32, 7.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482321GF-C85	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION
UPD4482321GF-C85-A	NEC	获取价格	Cache SRAM, 256KX32, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482321GF-C85Y	NEC	获取价格	Cache SRAM, 256KX32, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482321GF-C85Y-A	NEC	获取价格	Cache SRAM, 256KX32, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4482322	NEC	获取价格	8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT

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