Datasheet > UPD44645094F5-E50-FQ1-A

UPD44645094F5-E50-FQ1-A

更新时间： 2024-02-14 17:37:42

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器内存集成电路
页数	文件大小	规格书
40页	379K
描述
QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165

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UPD44645094F5-E50-FQ1-A 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	BGA
针数：	165	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.79	最大时钟频率 (fCLK)：	200 MHz
I/O 类型：	SEPARATE	JESD-30 代码：	R-PBGA-B165
内存密度：	75497472 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	9	端子数量：	165
字数：	8388608 words	字数代码：	8000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	8MX9
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	BGA	封装等效代码：	BGA165,11X15,40
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY
并行/串行：	PARALLEL	电源：	1.5/1.8,1.8 V
认证状态：	Not Qualified	最小待机电流：	1.7 V
子类别：	SRAMs	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	Base Number Matches：	1

UPD44645094F5-E50-FQ1-A 数据手册

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PRELIMINARY DATA SHEET

MOS INTEGRATED CIRCUIT

PD44645084, 44645094, 44645184, 44645364

72M-BIT QDR^TMII SRAM

4-WORD BURST OPERATION

Description

The μPD44645084 is a 8,388,608-word by 8-bit, the μPD44645094 is a 8,388,608-word by 9-bit, the μPD44645184 is a

4,194,304-word by 18-bit and the μPD44645364 is a 2,097,152-word by 36-bit synchronous quad data rate static RAM

fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

The μPD44645084, μPD44645094, μPD44645184 and μPD44645364 integrate unique synchronous peripheral

circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive

edge of K and K#.

These products are suitable for application which require synchronous operation, high speed, low voltage, high density

and wide bit configuration.

These products are packaged in 165-pin PLASTIC BGA.

Features

• 1.8 ± 0.1 V power supply

• 165-pin PLASTIC BGA (15 x 17)

• HSTL interface

• PLL circuitry for wide output data valid window and future frequency scaling

• Separate independent read and write data ports with concurrent transactions

• 100% bus utilization DDR READ and WRITE operation

• Four-tick burst for reduced address frequency

• Two input clocks (K and K#) for precise DDR timing at clock rising edges only

• Two output clocks (C and C#) for precise flight time

and clock skew matching-clock and data delivered together to receiving device

• Internally self-timed write control

• Clock-stop capability. Normal operation is restored in 1,024 cycles after clock is resumed.

• User programmable impedance output

• Fast clock cycle time : 3.7 ns (270 MHz) , 4.0 ns (250 MHz) , 5.0 ns (200 MHz)

• Simple control logic for easy depth expansion

• JTAG boundary scan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M18232EJ2V0DS00 (2nd edition)

Date Published February 2007 NS CP(N)

Printed in Japan

2006

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...40

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与UPD44645094F5-E50-FQ1-A相关器件

型号	品牌	描述	获取价格	数据表
UPD44645182F5-E40-FQ1-A	NEC	QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165	获取价格
UPD44645182F5-E50-FQ1	NEC	QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, BGA-165	获取价格
UPD44645182F5-E50-FQ1-A	NEC	QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165	获取价格
UPD44645184F5-E37-FQ1-A	NEC	QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165	获取价格
UPD44645184F5-E37-FQ1-A	RENESAS	QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165	获取价格
UPD44645184F5-E50-FQ1	NEC	QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, BGA-165	获取价格

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