Datasheet > UPD44645364F5-E40-FQ1

UPD44645364F5-E40-FQ1

更新时间： 2024-09-16 10:14:43

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器
页数	文件大小	规格书
40页	379K
描述
IC,SYNC SRAM,QDR,2MX36,CMOS,BGA,165PIN,PLASTIC

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UPD44645364F5-E40-FQ1 数据手册

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PRELIMINARY DATA SHEET

MOS INTEGRATED CIRCUIT

PD44645084, 44645094, 44645184, 44645364

72M-BIT QDR^TMII SRAM

4-WORD BURST OPERATION

Description

The μPD44645084 is a 8,388,608-word by 8-bit, the μPD44645094 is a 8,388,608-word by 9-bit, the μPD44645184 is a

4,194,304-word by 18-bit and the μPD44645364 is a 2,097,152-word by 36-bit synchronous quad data rate static RAM

fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

The μPD44645084, μPD44645094, μPD44645184 and μPD44645364 integrate unique synchronous peripheral

circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive

edge of K and K#.

These products are suitable for application which require synchronous operation, high speed, low voltage, high density

and wide bit configuration.

These products are packaged in 165-pin PLASTIC BGA.

Features

• 1.8 ± 0.1 V power supply

• 165-pin PLASTIC BGA (15 x 17)

• HSTL interface

• PLL circuitry for wide output data valid window and future frequency scaling

• Separate independent read and write data ports with concurrent transactions

• 100% bus utilization DDR READ and WRITE operation

• Four-tick burst for reduced address frequency

• Two input clocks (K and K#) for precise DDR timing at clock rising edges only

• Two output clocks (C and C#) for precise flight time

and clock skew matching-clock and data delivered together to receiving device

• Internally self-timed write control

• Clock-stop capability. Normal operation is restored in 1,024 cycles after clock is resumed.

• User programmable impedance output

• Fast clock cycle time : 3.7 ns (270 MHz) , 4.0 ns (250 MHz) , 5.0 ns (200 MHz)

• Simple control logic for easy depth expansion

• JTAG boundary scan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M18232EJ2V0DS00 (2nd edition)

Date Published February 2007 NS CP(N)

Printed in Japan

2006

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...40

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与UPD44645364F5-E40-FQ1相关器件

型号	品牌	获取价格	描述	数据表
UPD44645364F5-E50-FQ1	RENESAS	获取价格	IC,SYNC SRAM,QDR,2MX36,CMOS,BGA,165PIN,PLASTIC
UPD44645364F5-E50-FQ1-A	RENESAS	获取价格	2MX36 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
UPD44646092AF5-E33-FQ1-A	RENESAS	获取价格	UPD44646092AF5-E33-FQ1-A
UPD44646093AF5-E20-FQ1-A	RENESAS	获取价格	IC,SYNC SRAM,DDR,8MX9,CMOS,BGA,165PIN,PLASTIC
UPD44646093AF5-E25-FQ1-A	RENESAS	获取价格	IC,SYNC SRAM,DDR,8MX9,CMOS,BGA,165PIN,PLASTIC
UPD44646093AF5-E30-FQ1-A	RENESAS	获取价格	IC,SYNC SRAM,DDR,8MX9,CMOS,BGA,165PIN,PLASTIC
UPD44646094F5-E27-FQ1	NEC	获取价格	DDR SRAM, 8MX9, CMOS, PBGA165, 15 X 17 MM, PLASTIC, BGA-165
UPD44646094F5-E30-FQ1-A	NEC	获取价格	DDR SRAM, 8MX9, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
UPD44646095F5-E33-FQ1-A	NEC	获取价格	DDR SRAM, 8MX9, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
UPD44646096F5-E25-FQ1	NEC	获取价格	DDR SRAM, 8MX9, CMOS, PBGA165, 15 X 17 MM, PLASTIC, BGA-165

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