Datasheet > UPD30700RS-200

UPD30700RS-200

更新时间： 2024-11-20 23:39:51

品牌	Logo	应用领域
其他 - ETC		微处理器
页数	文件大小	规格书
68页	265K
描述
Microprocessor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UPD30700RS-200 数据手册

DATA SHEET

MOS INTEGRATED CIRCUIT

µPD30700,30700L,30710

VR10000^TM, VR12000^TM

64-BIT MICROPROCESSORS

DESCRIPTION

The µPD30700 and 30700L (VR10000) and µPD30710 (VR12000) are new members of NEC’s VR series^TMRISC

(Reduced Instruction Set Computer) microprocessors. These new high-performance 64-bit microprocessors employ

a new RISC architecture developed by MIPS^TM, ANDES^TMarchitecture.

The V^R10000 and VR12000 are designed to be used in high-performance computers and achieve considerably

higher processing speed through the employment of a super scalar pipeline.

Remark ANDES: Architecture with Non-sequential Dynamic Execution Scheduling

The functions of these microprocessors are described in detail in the following manuals. Be sure to read these

manuals when designing systems.

V^R10000, VR12000 User’s Manual

: U10278E

VR5000^TM, VR10000 User’s Manual - Instruction : U12754E

FEATURES

MIPS 64-bit RISC architecture

Operating frequency

•

High-speed operation processing

<V^R10000>

Superscalarpipelineexecutingfiveinstructionsinparallel

• Internal: 250 MHz MAX.

• External: 250 MHz MAX.

• External/internal multiplication factor selectable from

1 to 4

<V^R10000>

• 14SPECint95, 23SPECfp95

<V^R12000>

• 17SPECint95, 27SPECfp95

<V^R12000>

Instruction set upward-compatible with VR4000^TM

• Internal: 300 MHz MAX.

• External: 150 MHz MAX.

• External/internal multiplication factor selectable from

2 to 10

•

VR4200^TM, and VR4400^TM(conforms to MIPS-I/II/III/IV)

High-speedtranslationlookasidebuffer(TLB)(64double

entries)

•

Address space Physical: 40 bits

Virtual: 44 bits

Multi-processor function

•

• Uptofourbusesofclusterconnectioncanbeconnected.

Floating-point unit (FPU)

Supply voltage

•

Primarycachememory(32Kbytesforeachofinstruction <VR10000>

and data, 2-way set associative)

Secondary cache memory interface

• 128-bit secondary cache interface

• SSRAMinterface(VR10000:250MHzMAX.,VR12000:

200 MHz MAX.)

VDD = 3.3 V ±0.165 V (µPD30700)

V^DD= 2.6 V ±0.1 V (µPD30700L)

•

VDD = 2.6 V ±0.1 V (µPD30710)

• Supports up to 16M bytes

Unless otherwise specified, the VR10000 is treated as the representative model throughout this document.

The information in this document is subject to change without notice.

Date No. U12703EJ1V0DS00 (1st edition)

Date Published June 1998 N CP(K)

Printed in Japan

1998

MIPS Technologies Inc.

12 3 4 5 6 7...68

中文翻译

下载PDF

与UPD30700RS-200相关器件

型号	品牌	获取价格	描述	数据表
UPD30710A	ETC	获取价格	VR Series Pamphlet \| Pamphlet[12/2002]
UPD30710RS-300	ETC	获取价格	Microprocessor
UPD31172	NEC	获取价格	VRC4172TM COMPANION CHIP FOR VR4121TM
UPD31172F1-48-FN	NEC	获取价格	VRC4172TM COMPANION CHIP FOR VR4121TM
UPD31173	ETC	获取价格	VRC4173(TM) User＇s Manual \| User＇s Manual[02/
UPD3140GS-E1	RENESAS	获取价格	PLL FREQUENCY SYNTHESIZER, 550MHz, PDSO20, 0.300 INCH, PLASTIC, SSOP-20
UPD3140GS-E2	RENESAS	获取价格	PLL FREQUENCY SYNTHESIZER, 550MHz, PDSO20, 0.300 INCH, PLASTIC, SSOP-20
UPD3140GS-T1	RENESAS	获取价格	PLL FREQUENCY SYNTHESIZER, 550MHz, PDSO20, 0.300 INCH, PLASTIC, SSOP-20
UPD3140GS-T2	ETC	获取价格	Serial-Input Frequency Synthesizer
UPD31431	ETC	获取价格	Peripheral IC

与UPD30700RS-200相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

UPD30700RS-200

UPD30700RS-200 数据手册

与UPD30700RS-200相关器件

与UPD30700RS-200相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UPD30700RS-200

UPD30700RS-200 数据手册

与UPD30700RS-200相关器件

与UPD30700RS-200相关文章

您还可以找

您在本页遇到什么问题？