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UPC8211TK_05 PDF预览

UPC8211TK_05

更新时间: 2024-11-18 02:55:11
品牌 Logo 应用领域
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页数 文件大小 规格书
4页 287K
描述
SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS

UPC8211TK_05 数据手册

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NEC's SiGe  
LOW NOISE AMPLIFIER FOR  
UPC8211TK  
GPS/MOBILE COMMUNICATIONS  
INTERNAL BLOCK DIAGRAM  
FEATURES  
LOW NOISE:  
NF = 1.3 dB TYP.  
HIGH GAIN:  
GP = 18.5 dB TYP.  
1
2
3
6
5
4
Input  
GND  
Vcc  
LOW CURRENT CONSUMPTION:  
ICC = 3.5 mA TYP. at VCC = 3.0 V  
GND  
BUILT-IN POWER SAVE FUNCTION:  
HIGH-DENSITY SURFACE MOUNTING:  
6-pin lead less minimold package ( 1.5 x 1.3 x 0.55 mm)  
Bias  
PS  
Output  
APPLICATION  
DESCRIPTION  
NEC's UPC8211TK is a silicon germanium (SiGe) monolithic  
integrated circuit designed as low noise amplifier for GPS and  
as a general low nois amplifier for mobile communications.  
• Low Noise amplifier for GPS and mobile communications  
• General purpose low noise amplifier  
The package is 6-pin lead-less minimold (1.5 x 1.3 x 0.55 mm)  
suitable for surface mount and optimized for very densely  
populated compact designs.  
This IC is manufactured using NEC's 60 GHz fTUHS2 (Ultra  
High Speed Process) silicon bipolar process. This process  
can realize excellent low noise peformance and low power  
consumption simultaneously.  
NEC'sstringentqualityassuranceandtestproceduresensure  
the highest reliability and performance.  
ELECTRICAL CHARACTERISTICS,  
(Unless otherwise specified, TA = +25°C, VCC = 3.0 V, fin = 1575 MHz, VPS = 3.0 V)  
PART NUMBER  
PACKAGE OUTLINE  
UPC8211TK  
S06  
SYMBOLS  
PARAMETERS AND CONDITIONS  
Circuit Current (no input signal)  
UNITS  
mA  
μA  
MIN  
TYP  
3.5  
MAX  
4.5  
1
ICC  
At power save mode (VPS < 0.8V)  
Power Gain  
GP  
NF  
dB  
15.5  
18.5  
1.3  
-12  
-7.5  
-14.5  
-32.5  
21.5  
1.5  
Noise Figure  
dB  
IIP3  
3rd Order Distortion Input Intercept Point (Gain = 18.5 dB)  
Input Return Loss  
dBm  
dB  
RLIN  
RLOUT  
ISO  
-6  
Output Return Loss  
dB  
-10  
Isolation  
dB  
VPS ON  
VPS OFF  
Flat  
Rising Voltage from Power-Saving Mode  
Falling Voltage from Power-Saving Mode  
Gain Flatness (fin ±2.5 MHz)  
Gain1 dB Compression Output Power  
Output Power  
V
2.2  
V
0.8  
Δ0.5  
dB  
Po(1 dB)  
Po  
dBm  
dBm  
-4  
-1.5  
+2.0  
California Eastern Laboratories  

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