Datasheet > UPC8211TK-E2-A

UPC8211TK-E2-A

更新时间： 2024-10-14 19:46:35

品牌	Logo	应用领域
日电电子 - NEC		射频微波
页数	文件大小	规格书
11页	101K
描述
Narrow Band Low Power Amplifier, 1.50 X 1.33 MM, 0.55 MM HEIGHT, LEAD FREE, LEADLESS MINIMOLD PACKAGE-6

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UPC8211TK-E2-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	compliant	风险等级：	5.66
Is Samacsys：	N	构造：	COMPONENT
增益：	15.5 dB	最大输入功率 (CW)：	10 dBm
JESD-609代码：	e6	最高工作温度：	85 °C
最低工作温度：	-25 °C	射频/微波设备类型：	NARROW BAND LOW POWER
端子面层：	Tin/Bismuth (Sn/Bi)	Base Number Matches：	1

UPC8211TK-E2-A 数据手册

DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUIT

µPC8211TK

SiGe LOW NOISE AMPLIFIER

FOR GPS/MOBILE COMMUNICATIONS

DESCRIPTION

The µPC8211TK is a silicon germanium (SiGe) monolithic integrated circuit designed as low noise amplifier for

GPS and mobile communications.

The package is 6-pin lead-less minimold, suitable for surface mount.

This IC is manufactured using our 50 GHz f^maxUHS2 (Ultra High Speed Process) SiGe bipolar process.

FEATURES

•

Low noise

: NF = 1.3 dB TYP. @ VCC = 3.0 V

: GP = 18.5 dB TYP. @ VCC = 3.0 V

: I^CC= 3.5 mA TYP. @ VCC = 3.0 V

High gain

Low current consumption

Gain 1 dB compression output power : P^{o (1 dB)}= −6.0 dBm @ VCC = 3.0 V

Built-in power-save function

High-density surface mounting

: 6-pin lead-less minimold package (1.5 × 1.3 × 0.55 mm)

APPLICATION

•

Low noise amplifier for GPS and mobile communications

ORDERING INFORMATION

Part Number

Order Number

Package

Marking

Supplying Form

µPC8211TK-E2 µPC8211TK-E2-A

6-pin lead-less minimold

(1511 PKG) (Pb-Free)^Note

• Embossed tape 8 mm wide

• Pin 1, 6 face the perforation side of the tape

• Qty 5 kpcs/reel

Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact

your nearby sales office.

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: µPC8211TK

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10426EJ04V0DS (4th edition)

Date Published January 2006 CP(K)

The mark shows major revised points.

Printed in Japan



NEC Compound Semiconductor Devices, Ltd. 2003, 2006

12 3 4 5 6 7...11

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与UPC8211TK-E2-A相关器件

型号	品牌	获取价格	描述	数据表
UPC8215TU	CEL	获取价格	SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS
UPC8215TU-E2	CEL	获取价格	SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS
UPC8215TU-E2-A	CEL	获取价格	SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS
UPC8218T5A-E1	NEC	获取价格	Narrow Band Low Power Amplifier, 3.30 X 2.30 MM, 0.60 MM HEIGHT, PLASTIC, TSON-16
UPC8218T5A-E1	RENESAS	获取价格	RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER, 3.30 X 2.30 MM, 0.60 MM HEIGHT, PLASTIC, TSO
UPC8220T5A-E1	NEC	获取价格	Telecom Circuit, 1-Func, Bipolar, PDSO16, 3.30 X 2.30 MM, 0.60 MM HEIGHT, LEAD FREE, PLAST
UPC8220T5A-E1-A	NEC	获取价格	Telecom Circuit, 1-Func, Bipolar, PDSO16, 3.30 X 2.30 MM, 0.60 MM HEIGHT, LEAD FREE, PLAST
UPC8226TK	NEC	获取价格	Wide Band Low Power Amplifier, SUPER MINIMOLD-6
UPC8226TK-E2-A	NEC	获取价格	Wide Band Low Power Amplifier, LEAD FREE PACKAGE-6
UPC822G2	RENESAS	获取价格	Dual Operational amplifier

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