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UPC3225TB-E3 PDF预览

UPC3225TB-E3

更新时间: 2024-11-18 06:02:27
品牌 Logo 应用领域
日电电子 - NEC 放大器功率放大器输出元件
页数 文件大小 规格书
17页 156K
描述
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER

UPC3225TB-E3 数据手册

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DATA SHEET  
BIPOLAR ANALOG INTEGRATED CIRCUIT  
µ
PC3225TB  
5 V, SILICON GERMANIUM MMIC  
MEDIUM OUTPUT POWER AMPLIFIER  
DESCRIPTION  
The µPC3225TB is a silicon germanium (SiGe) monolithic integrated circuits designed as IF amplifier for DBS  
tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.  
FEATURES  
Wideband response  
Low current  
: fu = 2.8 GHz TYP. @ 3 dB bandwidth  
: ICC = 24.5 mA TYP.  
Medium output power  
: PO (sat) = +15.5 dBm TYP. @ f = 0.95GHz  
: PO (sat) = +12.5 dBm TYP. @ f = 2.15 GHz  
: PO (1dB) = +9.0 dBm TYP. @ f = 0.95 GHz  
: PO (1dB) = +7.0 dBm TYP. @ f = 2.15 GHz  
: GP = 32.5 dB TYP. @ f = 0.95 GHz  
: GP = 33.5 dB TYP. @ f = 2.15 GHz  
: NF = 3.7 dB TYP. @ f = 0.95 GHz  
: NF = 3.7 dB TYP. @ f = 2.15 GHz  
: VCC = 4.5 to 5.5 V  
High linearity  
Power gain  
Noise Figure  
Supply voltage  
Port impedance  
: input/output 50 Ω  
APPLICATIONS  
IF amplifiers in LNB for DBS converters etc.  
ORDERING INFORMATION  
Part Number  
Order Number  
Package  
Marking  
C3M  
Supplying Form  
Embossed tape 8 mm wide.  
µPC3225TB-E3  
µPC3225TB-E3-A 6-pin super minimold  
(Pb-Free)Note  
1, 2, 3 pins face the perforation side of the tape.  
Qty 3 kpcs/reel.  
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact  
your nearby sales office.  
Remark To order evaluation samples, please contact your nearby sales office  
Part number for sample order: µPC3225TB.  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10500EJ01V0DS (1st edition)  
Date Published December 2004 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices, Ltd. 2004  

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