UPC2757T
UPC2758T
3 V, SILICON MMIC
FREQUENCY CONVERTER
CONVERSION GAIN vs. LO FREQUENCY
FEATURES
VCC = 3 V, LO Power = -5 dBm
RF Above LO
•
•
•
•
•
•
WIDE BAND OPERATION UP TO 2.5 GHz
LOW VOLTAGE OPERATION: 2.7 V Minimum
LOW POWER CONSUMPTION: 15 mW (UPC2757T)
POWER SAVE FUNCTION
25
20
200 MHz IF
UPC2758T
400 MHz IF
SUPER SMALL PACKAGE
TAPE AND REEL PACKAGING OPTION AVAILABLE
UPC2757T
15
DESCRIPTION
The UPC2757T and UPC2758T are L-Band Frequency Con-
verters manufactured using the NESAT III MMIC process.
These products consist of a double balanced mixer, IF ampli-
fier and LO buffer amplifier. The UPC2757T is designed for
low power consumption while the UPC2758T is designed for
low distortion. Both devices operate on a 3 volt supply voltage
making them ideal for portable hand held cellular, GPS, PCN
and wireless LAN applications.
10
5
0
2000
500
1000
1500
2500
LO Frequency (MHz)
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 3 V, VPS = 3 V, PLO = -10 dBm)
PART NUMBER
PACKAGE OUTLINE
UPC2757T
T06
UPC2758T
T06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
ICC
Circuit Current,
VPS = 3 V
VPS = 0.5 V
mA
µA
3.7
5.6
0.1
7.7
6.6
11
0.1
14.8
fRF
fIF
RF Operating Frequency Range
(The conversion gain at fRF is not more than 3 dB down
from the gain at fRF = 800 MHz, fIF = 130 MHz)
GHz
MHz
0.1
20
2.0
0.1
20
2.0
IF Operating Frequency Range
(The conversion gain at fIF is not more than 3 dB down from
the gain at fRF = 800 MHz, fIF = 130 MHz)
300
300
CG
NF
Conversion Gain1, fRF = 800 MHz, fIF = 130 MHz
fRF = 2.0 GHz, fIF = 250 MHz
dB
dB
12
10
15
13
18
16
16
14
19
17
22
20
Noise Figure,
fRF = 800 MHz, fIF = 130 MHz
fRF = 2.0 GHz, fIF = 250 MHz
dB
dB
10
13
13
16
9
13
12
15
PSAT
PIdB
Saturated Output Power2,fRF = 800 MHz, fIF = 100 MHz
dBm
dBm
-3
-8
+1
Output Power at 1dB
compression point
fRF = 800 MHz
fIF = 100 MHz
-3.5
OIP3
ISO
Output 3rd Order Intercept Point, (SSB) PLO = -10 dBm
fRF = 0.8~2.0 GHz, fIF = 100 MHz
dBm
0
5
LO Leakage, fLO = 0.8 ~2.0 GHz
at RF pin
at IF pin
dBm
dBm
-35
-23
-30
-15
RTH (J-A)
Thermal Resistance (Junction to Ambient)
Free Air
°C/W
°C/W
620
230
620
230
Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB
Notes:
1. PRF = -40 dBm.
2. PRF = -10 dBm.
California Eastern Laboratories