DATA SHEET
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC1679G
5 V-BIAS, +15.5 dBm OUTPUT, 1.8 GHz WIDEBAND
Si MMIC AMPLIFIER
DESCRIPTION
The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high
frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter
stage amplifier of L Band wireless communication systems. This IC is packaged in 8-pin plastic SOP.
This IC is manufactured using NEC’s 20 GHz fT NESATTMIV silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
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Supply voltage
Saturated output power
Wideband response
Isolation
: VCC = 4.5 to 5.5 V
: PO(sat) = +15.5 dBm TYP. @ f = 500 MHz with external inductor
: fu = 1.8 GHz TYP. @ 3 dB bandwidth
: ISL = 34 dB TYP. @ f = 500 MHz
Power Gain
: GP = 21.5 dB TYP. @ f = 500 MHz
ORDERING INFORMATION
Part Number
Package
8-pin plastic SOP (225 mil)
Marking
1679
Supplying Form
µPC1679G-E1
Embossed tape 12 mm wide.
1 pin is tape pull-out direction.
Qty 2.5 kp/reel.
µPC1679G-E2
Embossed tape 12 mm wide.
1 pin is tape roll-in direction.
Qty 2.5 kp/reel.
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: µPC1679G)
Caution Electro-static sensitive devices.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12434EJ4V0DS00 (4th edition)
Date Published September 1999 N CP(K)
Printed in Japan
The mark
shows major revision points.
©
1994, 1999