Datasheet > 射频和微波 > 射频/微波放大器> UPC1679G-E2

UPC1679G-E2

更新时间： 2024-11-17 22:22:27

品牌	Logo	应用领域
日电电子 - NEC		射频和微波射频放大器微波放大器输出元件
页数	文件大小	规格书
12页	75K
描述
5 V-BIAS, +5.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UPC1679G-E2 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.81	Is Samacsys：	N
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	19.5 dB	最大输入功率 (CW)：	10 dBm
最大工作频率：	1800 MHz	最高工作温度：	85 °C
最低工作温度：	-45 °C	射频/微波设备类型：	WIDE BAND LOW POWER
Base Number Matches：	1

UPC1679G-E2 数据手册

DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUIT

µPC1679G

5 V-BIAS, +15.5 dBm OUTPUT, 1.8 GHz WIDEBAND

Si MMIC AMPLIFIER

DESCRIPTION

The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high

frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter

stage amplifier of L Band wireless communication systems. This IC is packaged in 8-pin plastic SOP.

This IC is manufactured using NEC’s 20 GHz f^TNESAT^TMIV silicon bipolar process. This process uses silicon

nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and

prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

•

Supply voltage

Saturated output power

Wideband response

Isolation

: V^CC= 4.5 to 5.5 V

: P^O(sat)= +15.5 dBm TYP. @ f = 500 MHz with external inductor

: f^u= 1.8 GHz TYP. @ 3 dB bandwidth

: ISL = 34 dB TYP. @ f = 500 MHz

Power Gain

: G^P= 21.5 dB TYP. @ f = 500 MHz

ORDERING INFORMATION

Part Number

Package

8-pin plastic SOP (225 mil)

Marking

1679

Supplying Form

µPC1679G-E1

Embossed tape 12 mm wide.

1 pin is tape pull-out direction.

Qty 2.5 kp/reel.

µPC1679G-E2

Embossed tape 12 mm wide.

1 pin is tape roll-in direction.

Qty 2.5 kp/reel.

Remark To order evaluation samples, please contact your local NEC sales office.

(Part number for sample order: µPC1679G)

Caution Electro-static sensitive devices.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P12434EJ4V0DS00 (4th edition)

Date Published September 1999 N CP(K)

Printed in Japan

The mark

shows major revision points.

1994, 1999

12 3 4 5 6 7...12

中文翻译

下载PDF

与UPC1679G-E2相关器件

型号	品牌	获取价格	描述	数据表
UPC1684B	ETC	获取价格	Interface IC
UPC1684P	ETC	获取价格	Interface IC
UPC1685B	ETC	获取价格	Analog IC
UPC1685G	NEC	获取价格	GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC
UPC1685G-E1	NEC	获取价格	GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC
UPC1685P	ETC	获取价格	Analog IC
UPC1686	NEC	获取价格	GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC
UPC1686B	ETC	获取价格	Analog IC
UPC1686G	NEC	获取价格	GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC
UPC1686G-E1	NEC	获取价格	GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC

与UPC1679G-E2相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

UPC1679G-E2

UPC1679G-E2 技术参数

UPC1679G-E2 数据手册

与UPC1679G-E2相关器件

与UPC1679G-E2相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UPC1679G-E2

UPC1679G-E2 技术参数

UPC1679G-E2 数据手册

与UPC1679G-E2相关器件

与UPC1679G-E2相关文章

您还可以找

您在本页遇到什么问题？