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UPA804TC-T1FB-A

更新时间： 2024-01-19 23:40:08
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
16页 66K
描述
RF Small Signal Bipolar Transistor, 0.06A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6

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中文翻译

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UPA804TC-T1FB-A 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.07
Is Samacsys：N最大集电极电流 (IC)：0.06 A
基于收集器的最大容量：1.2 pF集电极-发射极最大电压：12 V
配置：SEPARATE, 2 ELEMENTS最高频带：ULTRA HIGH FREQUENCY BAND
JESD-30 代码：R-PDSO-F6JESD-609代码：e6
元件数量：2端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子面层：TIN BISMUTH
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
标称过渡频率 (fT)：5000 MHzBase Number Matches：1

UPA804TC-T1FB-A 数据手册

 浏览型号UPA804TC-T1FB-A的Datasheet PDF文件第2页浏览型号UPA804TC-T1FB-A的Datasheet PDF文件第3页浏览型号UPA804TC-T1FB-A的Datasheet PDF文件第4页浏览型号UPA804TC-T1FB-A的Datasheet PDF文件第5页浏览型号UPA804TC-T1FB-A的Datasheet PDF文件第6页浏览型号UPA804TC-T1FB-A的Datasheet PDF文件第7页 
DATA SHEET  
NPN SILICON RF TWIN TRANSISTOR  
µPA804TC  
NPN SILICON EPITAXIAL TRANSISTOR  
(WITH BUILT-IN 2 × 2SC5004)  
FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD  
DESCRIPTION  
The µPA804TC has built-in two transistors which were developed for UHF.  
FEATURES  
•
•
•
High fT: fT = 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)  
Flat-lead 6-pin thin-type ultra super minimold package  
Built-in 2 transistors (2 × 2SC5004)  
ORDERING INFORMATION  
Part Number  
Package  
Quantity  
Supplying Form  
Embossed tape 8 mm wide.  
µPA804TC  
Flat-lead 6-pin  
thin-type ultra  
super minimold  
Loose products  
(50 pcs)  
Pin 4 (Q2 Emitter) face to  
Pin 6 (Q1 Base), Pin 5 (Q2 Base),  
perforation side of the tape.  
µPA804TC-T1  
Taping products  
(3 kp/reel)  
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:  
µPA804TC. Unit sample quantity is 50 pcs.)  
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)  
Parameter  
Symbol  
VCBO  
Ratings  
Unit  
V
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
20  
12  
3
VCEO  
V
VEBO  
V
IC  
60  
mA  
mW  
PTNote  
Total Power Dissipation  
150 in 1 element  
200 in 2 elements  
Junction Temperature  
Storage Temperature  
Tj  
125  
˚C  
˚C  
Tstg  
–55 to +125  
Note Mounted on 1.08 cm2 × 1.0 mm glass epoxy substrate.  
Caution Electro-static sensitive devices  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for availability  
and additional information.  
Document No. P14549EJ1V0DS00 (1st edition)  
Date Published November 1999 N CP(K)  
Printed in Japan  
1999  
©
1234567...16

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 		RF Small Signal Bipolar Transistor, 0.06A I(C), 2-Element, Ultra High Frequency Band, Sili
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 		RF Small Signal Bipolar Transistor, 0.06A I(C), 2-Element, Ultra High Frequency Band, Sili
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 		2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
UPA804T-GB-A NEC

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 		2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-6

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