Datasheet > 晶体管 > 小信号场效应晶体管> UPA1952

UPA1952

更新时间： 2024-01-11 19:59:43

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管场效应晶体管开关
页数	文件大小	规格书
8页	73K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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UPA1952 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µ PA1952

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µ PA1952 is a switching device, which can be driven

directly by a 1.8 V power source.

+0.1

–0.05

+0.1

0.32

0.16

–0.06

The device features a low on-state resistance and excellent

switching characteristics, and is suitable for applications

such as power switch of portable machine and so on.

0 to 0.1

FEATURES

• 1.8 V drive available

• Low on-state resistance

0.65

R^DS(on)1= 135 mΩ MAX. (V^GS= −4.5V, I^D= −1.0 A)

R^DS(on)2= 183 mΩ MAX. (V^GS= −2.5 V, I^D= −1.0 A)

R^DS(on)3= 284 mΩ MAX. (V^GS= −1.8 V, I^D= −0.5 A)

0.95 0.95

1.9

0.9 to 1.1

2.9 ±0.2

ORDERING INFORMATION

6: Drain 1

1: Gate 1

5: Source 1

: Drain 2

3: Gate 2

2: Source 2

PART NUMBER

PACKAGE

µ PA1952TE

SC-95 (Mini Mold Thin Type)

Marking: TP

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

EQUIVALENT CIRCUITS

V^DSS

V^GSS

I^D(DC)

−20

m8.0

m2.0

m8.0

1.15

0.57

150

Drain 1

Drain 2

Body

Diode

Drain Current (pulse) ^Note1

Gate 1

Gate 2

Diode

I^D(pulse)

P^T1

Total Power Dissipation (2 units) ^Note2

Total Power Dissipation (1 unit) ^Note2

Channel Temperature

Gate

°C

Protection

Diode

Protection

Diode

Source 1

Source 2

P^T2

T^ch

Storage Temperature

T^stg

−55 to +150 °C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board of 5000 mm²x 1.1 mm, t ≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. G15933EJ1V0DS00 (1st edition)

Date Published August 2002 NS CP(K)

Printed in Japan

2001

12 3 4 5 6 7 8

中文翻译

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与UPA1952相关器件

型号	品牌	获取价格	描述	数据表
UPA1952TE	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1952TE	RENESAS	获取价格	2000mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-95, THIN, MINIMOLD PACKAGE
UPA1952TE-A	NEC	获取价格	Power Field-Effect Transistor, 2A I(D), 20V, 0.284ohm, 2-Element, P-Channel, Silicon, Meta
UPA1952TE-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,2A I(D),TSOP
UPA1952TE-T1-A	RENESAS	获取价格	Pch Dual Power Mosfet -20V -2A 135Mohm 6Pin Tmm/Sc-95, TMM, /Embossed Tape
UPA1952TE-T1-AT	RENESAS	获取价格	Pch Dual Power Mosfet -20V -2A 135Mohm 6Pin Tmm/Sc-95, TMM, /Embossed Tape
UPA1952TE-T2	RENESAS	获取价格	UPA1952TE-T2
UPA1970	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1970TE	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1970TE-A	NEC	获取价格	Power Field-Effect Transistor, 2.2A I(D), 20V, 0.107ohm, 2-Element, N-Channel, Silicon, Me

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