生命周期: | Transferred | 零件包装代码: | SC-95 |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.34 | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 2 A |
最大漏源导通电阻: | 0.284 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 8 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA1952TE-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,2A I(D),TSOP |
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UPA1952TE-T1-A | RENESAS |
获取价格 |
Pch Dual Power Mosfet -20V -2A 135Mohm 6Pin Tmm/Sc-95, TMM, /Embossed Tape |
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UPA1952TE-T1-AT | RENESAS |
获取价格 |
Pch Dual Power Mosfet -20V -2A 135Mohm 6Pin Tmm/Sc-95, TMM, /Embossed Tape |
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UPA1952TE-T2 | RENESAS |
获取价格 |
UPA1952TE-T2 |
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UPA1970 | NEC |
获取价格 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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UPA1970TE | NEC |
获取价格 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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UPA1970TE-A | NEC |
获取价格 |
Power Field-Effect Transistor, 2.2A I(D), 20V, 0.107ohm, 2-Element, N-Channel, Silicon, Me |
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UPA1980 | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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UPA1980TE | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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UPA1980TE | RENESAS |
获取价格 |
2000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIMOLD, SC-95, 6 PIN |
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