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UPA1952TE-A

更新时间： 2024-02-19 00:09:13
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
4页 35K
描述
Power Field-Effect Transistor, 2A I(D), 20V, 0.284ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SC-95, 6 PIN

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UPA1952TE-A 技术参数

生命周期：Transferred零件包装代码：SC-95
包装说明：SMALL OUTLINE, R-PDSO-G6针数：6
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.34配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (ID)：2 A
最大漏源导通电阻：0.284 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G6元件数量：2
端子数量：6工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大脉冲漏极电流 (IDM)：8 A
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

UPA1952TE-A 数据手册

 浏览型号UPA1952TE-A的Datasheet PDF文件第2页浏览型号UPA1952TE-A的Datasheet PDF文件第3页浏览型号UPA1952TE-A的Datasheet PDF文件第4页 
PRELIMINARY PRODUCT INFORMATION  
MOS FIELD EFFECT TRANSISTOR  
µPA1952  
P-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit: mm)  
The µ PA1952 is a switching device which can be driven  
directly by a 1.8 V power source.  
+0.1  
–0.05  
+0.1  
–0.06  
0.32  
0.16  
The device features a low on-state resistance and excellent  
switching characteristics, and is suitable for applications such  
as power switch of portable machine and so on.  
6
1
5
2
4
3
0 to 0.1  
FEATURES  
• 1.8 V drive avaliable  
• Low on-state resistance  
RDS(on)1 = 135 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A)  
RDS(on)2 = 183 mΩ MAX. (VGS = –2.5 V, ID = –1.0 A)  
RDS(on)3 = 284 mΩ MAX. (VGS = –1.8 V, ID = –1.0 A)  
0.65  
0.95 0.95  
1.9  
0.9 to 1.1  
2.9 ±0.2  
ORDERING INFORMATION  
6:  
1:  
5:  
Drain 1  
Gate 1  
Source 1  
4
3:  
2:  
:
Drain 2  
Gate 2  
Source 2  
PART NUMBER  
PACKAGE  
Note  
µ PA1952TE  
SC-95 (Mini Mold Thin Type)  
Note Marking: TP  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TA = 25°C)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
–20  
m8.0  
m2.0  
m8.0  
1.15  
0.57  
150  
V
V
EQUIVALENT CIRCUIT  
Drain 1  
Drain 2  
A
Body  
Body  
Diode  
Drain Current (pulse) Note1  
A
Gate 1  
Gate 2  
Diode  
Total Power Dissipation (2 unit) (TA = 25°C)Note2  
Total Power Dissipation (1 unit) (TA = 25°C)Note2  
Channel Temperature  
W
W
°C  
Gate  
Gate  
Protection  
Diode  
Protection  
Diode  
Source 1  
Source 2  
PT2  
Tch  
Storage Temperature  
Tstg  
–55 to +150 °C  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%  
2. Mounted on FR-4 board, t ≤ 5 sec.  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated  
voltage may be applied to this device.  
The information contained in this document is being issued in advance of the production cycle for the  
device. The parameters for the device may change before final production or NEC Corporation, at its own  
discretion, may withdraw the device prior to its production.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
G15933EJ1V0PM00 (1st edition)  
Date Published December 2001 NS CP(K)  
Printed in Japan  
2001  
©
1234

中文翻译

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