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UNR9212 PDF预览

UNR9212

更新时间: 2024-11-24 23:39:35
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关光电二极管
页数 文件大小 规格书
16页 258K
描述
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416

UNR9212 数据手册

 浏览型号UNR9212的Datasheet PDF文件第2页浏览型号UNR9212的Datasheet PDF文件第3页浏览型号UNR9212的Datasheet PDF文件第4页浏览型号UNR9212的Datasheet PDF文件第5页浏览型号UNR9212的Datasheet PDF文件第6页浏览型号UNR9212的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/  
921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ  
(UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/921E/921F/  
921K/921L/921M/921N/921AJ/921BJ/921CJ)  
Unit: mm  
1.6 0.15  
Silicon NPN epitaxial planer transistor  
0.4  
0.8 0.1  
0.4  
For digital circuits  
1
Features  
I
G
3
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
2
G
SS-Mini type package, allowing automatic insertion through tape  
packing and magazine packing.  
Resistance by Part Number  
I
0.2 0.1  
Marking Symbol (R1)  
(R2)  
10k  
22kΩ  
47kΩ  
47kΩ  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
4.7kΩ  
4.7kΩ  
47kΩ  
47kΩ  
100kΩ  
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
UNR9211  
UNR9212  
UNR9213  
UNR9214  
UNR9215  
UNR9216  
UNR9217  
UNR9218  
UNR9219  
UNR9210  
UNR921D  
UNR921E  
UNR921F  
UNR921K  
UNR921L  
UNR921M  
UNR921N  
UNR921AJ  
UNR921BJ  
UNR921CJ  
8A  
8B  
8C  
8D  
8E  
8F  
10kΩ  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
10kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
100kΩ  
100kΩ  
1 : Base  
2 : Emitter  
3 : Collector  
SS–Mini Type Pakage  
Unit: mm  
1.60 0.05  
0.80 0.80 0.05  
0.425 0.425  
8H  
8I  
8K  
8L  
8M  
8N  
8O  
8P  
8Q  
EL  
EX  
8X  
8Y  
8Z  
0.85+00..0035  
1 : Base  
2 : Emitter  
47kΩ  
3 : Collector  
SS–Mini Flat Type Pakage (J type)  
Absolute Maximum Ratings (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
50  
50  
Internal Connection  
V
100  
mA  
mW  
˚C  
C
E
R1  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
125  
B
Tj  
125  
R2  
Tstg  
–55 to +125  
˚C  
Note.) The Part numbers in the Parenthesis show conventional part number.  
1

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