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UNR6116Q PDF预览

UNR6116Q

更新时间: 2024-11-21 20:28:07
品牌 Logo 应用领域
松下 - PANASONIC 开关晶体管
页数 文件大小 规格书
14页 364K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3 PIN

UNR6116Q 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):160
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:PNP最大功率耗散 (Abs):0.4 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

UNR6116Q 数据手册

 浏览型号UNR6116Q的Datasheet PDF文件第2页浏览型号UNR6116Q的Datasheet PDF文件第3页浏览型号UNR6116Q的Datasheet PDF文件第4页浏览型号UNR6116Q的Datasheet PDF文件第5页浏览型号UNR6116Q的Datasheet PDF文件第6页浏览型号UNR6116Q的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR6111/6112/6113/6114/6115/6116/6117/  
6118/6119/6110/611D/611E/611F/611H/611L  
(UN6111/6112/6113/6114/6115/6116/6117/6118/6119/  
6110/611D/611E/611F/611H/611L)  
Unit: mm  
6.9±±.1  
2.5±±.1  
(±.8)  
Silicon PNP epitaxial planer transistor  
(±.7)  
(4.±)  
For digital circuits  
±.65 ma
Features  
I
G
Costs can be reduced through downsizing of thequiment and  
reduction of the number of parts.  
G
MT-1 type package, allowing supply with the taping.  
+±.1±  
+±.1±  
±.45  
±.45  
–±.±5  
–±.±5  
1.±5±±.±5  
2.5±±.5  
Resistance by Part Nur  
I
2.5±±.5  
(R1
0k  
22Ω  
7kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51Ω  
1kΩ  
4kΩ  
47kΩ  
47kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
(R2)  
10kΩ  
22kΩ  
47k
47kΩ  
1 : Emitter  
2 : Collector  
3 : Base  
G
G
G
G
G
G
G
G
G
G
G
G
G
UNR6111  
UNR6112  
UNR6113  
UNR6114  
UNR6115  
UNR616  
UNR6
UNR
NR6119  
UNR6110  
UNR611D  
UN
U
UNR
1
2
3
MT-1-A1 Package  
Internal Connection  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
10kΩ  
4.7kΩ  
C
E
R1  
B
R2  
Absolute Maximum Ratings (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
–50  
V
–100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
400  
Tj  
150  
Tstg  
–55 to +150  
˚C  
Note) The Part numbers in the Parenthesis show conventional part number.  
1

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