Datasheet > UNR6110Q

UNR6110Q

更新时间： 2024-11-20 23:39:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
14页	229K
描述
TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SC-71

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中文翻译

获取价格

数据手册

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UNR6110Q 数据手册

Transistors with built-in Resistor

UNR6111/6112/6113/6114/6115/6116/6117/

6118/6119/6110/611D/611E/611F/611H/611L

(UN6111/6112/6113/6114/6115/6116/6117/6118/6119/

6110/611D/611E/611F/611H/611L)

Unit: mm

6.9 0.1

4.0

2.5 0.1

1.05

0.05

Silicon PNP epitaxial planer transistor

(1.45)

0.8

0.7

For digital circuits

0.65 max.

Features

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

MT-1 type package, allowing supply with the radial taping.

0.45⁺–0⁰.^.0¹5

2.5 0.5 2.5 0.5

Resistance by Part Number

(R₁)

10kΩ

22kΩ

47kΩ

10kΩ

4.7kΩ

22kΩ

0.51kΩ

1kΩ

47kΩ

4.7kΩ

2.2kΩ

4.7kΩ

(R₂)

10kΩ

22kΩ

47kΩ

—

1 : Emitter

2 : Collector

3 : Base

UNR6111

UNR6112

UNR6113

UNR6114

UNR6115

UNR6116

UNR6117

UNR6118

UNR6119

UNR6110

UNR611D

UNR611E

UNR611F

UNR611H

UNR611L

MT-1 Type Package

—

Internal Connection

5.1kΩ

10kΩ

—

10kΩ

22kΩ

10kΩ

4.7kΩ

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

–50

Unit

Collector to base voltage

Collector to emitter voltage

Collector current

–50

–100

˚C

Total power dissipation

Junction temperature

Storage temperature

P_T

400

T_j

150

T_stg

–55 to +150

˚C

Note.) The Part numbers in the Parenthesis show conventional part number.

12 3 4 5 6 7...14

中文翻译

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与UNR6110Q相关器件

型号	品牌	获取价格	描述	数据表
UNR6110R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3
UNR6110S	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3
UNR6111	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3
UNR6111(UN6111)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR6112	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3
UNR6112(UN6112)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR6113	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3
UNR6113(UN6113)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR6114	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3
UNR6114(UN6114)	ETC	获取价格	Composite Device - Transistors with built-in Resistor