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UNR6110Q PDF预览

UNR6110Q

更新时间: 2024-10-29 23:39:31
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
14页 229K
描述
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71

UNR6110Q 数据手册

 浏览型号UNR6110Q的Datasheet PDF文件第2页浏览型号UNR6110Q的Datasheet PDF文件第3页浏览型号UNR6110Q的Datasheet PDF文件第4页浏览型号UNR6110Q的Datasheet PDF文件第5页浏览型号UNR6110Q的Datasheet PDF文件第6页浏览型号UNR6110Q的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR6111/6112/6113/6114/6115/6116/6117/  
6118/6119/6110/611D/611E/611F/611H/611L  
(UN6111/6112/6113/6114/6115/6116/6117/6118/6119/  
6110/611D/611E/611F/611H/611L)  
Unit: mm  
6.9 0.1  
4.0  
2.5 0.1  
1.05  
0.05  
Silicon PNP epitaxial planer transistor  
(1.45)  
0.8  
0.7  
For digital circuits  
0.65 max.  
Features  
I
G
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
MT-1 type package, allowing supply with the radial taping.  
0.45+00..015  
G
2.5 0.5 2.5 0.5  
1
2
3
Resistance by Part Number  
I
(R1)  
10k  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
(R2)  
10kΩ  
22kΩ  
47kΩ  
47kΩ  
1 : Emitter  
2 : Collector  
3 : Base  
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
UNR6111  
UNR6112  
UNR6113  
UNR6114  
UNR6115  
UNR6116  
UNR6117  
UNR6118  
UNR6119  
UNR6110  
UNR611D  
UNR611E  
UNR611F  
UNR611H  
UNR611L  
MT-1 Type Package  
Internal Connection  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
10kΩ  
4.7kΩ  
C
E
R1  
B
R2  
Absolute Maximum Ratings (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
–50  
V
–100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
400  
Tj  
150  
Tstg  
–55 to +150  
˚C  
Note.) The Part numbers in the Parenthesis show conventional part number.  
1

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