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UNR5118(UN5118) PDF预览

UNR5118(UN5118)

更新时间: 2024-11-14 23:39:31
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
18页 632K
描述
Composite Device - Transistors with built-in Resistor

UNR5118(UN5118) 数据手册

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Transistors with built-in Resistor  
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/  
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z  
(UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/511D/511E/511F/  
511H/511L/511M/511N/511T/511V/511Z)  
Silicon PNP epitaxial planer transistor  
For digital circuits  
Unit: mm  
+±.1±  
–±.±5  
+±.1  
–±.±  
±.15  
±.3  
3
Features  
I
G
1
2
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
(±.65) (±.65)  
G
S-Mini type package, allowing automatic insertion through tape  
packing and magazine packing.  
1.3±±.1  
2.±±±.2  
°  
Resistance by Part Number  
I
Marking Symbol (R1)  
(R2)  
10k  
22kΩ  
47kΩ  
47kΩ  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
10kΩ  
4.7kΩ  
47kΩ  
47kΩ  
47kΩ  
2.2kΩ  
22kΩ  
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
UNR5111  
UNR5112  
UNR5113  
UNR5114  
UNR5115  
UNR5116  
UNR5117  
UNR5118  
UNR5119  
UNR5110  
UNR511D  
UNR511E  
UNR511F  
UNR511H  
UNR511L  
UNR511M  
UNR511N  
UNR511T  
UNR511V  
UNR511Z  
6A  
6B  
6C  
6D  
6E  
6F  
10kΩ  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51Ω  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
22kΩ  
2.2kΩ  
4.7kΩ  
1 : Base  
2 : Emitter  
3 : Collector  
EIAJ : SC–70  
SMini3-G1 Package  
6H  
6I  
Internal Connection  
6K  
6L  
6M  
6N  
6O  
6P  
6Q  
EI  
EW  
EY  
FC  
FE  
C
E
R1  
B
R2  
Absolute Maximum Ratings (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
–50  
V
–100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
150  
Tj  
150  
Tstg  
–55 to +150  
˚C  
Note) The Part numbers in the Parenthesis show conventional part number.  
1

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