Datasheet > UNR5110|UN5110

UNR5110|UN5110

更新时间： 2024-11-13 23:39:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
17页	436K
描述
Composite Device - Transistors with built-in Resistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UNR5110|UN5110 数据手册

Transistors with built-in Resistor

UNR511x Series (UN511x Series)

Silicon PNP epitaxial planar type

Unit: mm

For digital circuits

+0.10

+0.1

0.15

0.3

–0.0

–0.05

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts

• S-Mini type package, allowing automatic insertion through the tape/

magazine packing

(0.65)

1.3 0.1

2.0 0.2

■ Resistance by Part Number

10˚

Marking symbol (R₁)

(R₂)



•

UNR5110 (UN5110)

UNR5111 (UN5111)

UNR5112 (UN5112)

UNR5113 (UN5113)

UNR5114 (UN5114)

UNR5115 (UN5115)

UNR5116 (UN5116)

UNR5117 (UN5117)

UNR5118 (UN5118)

UNR5119 (UN5119)

UNR511D (UN511D)

UNR511E (UN511E)

UNR511F (UN511F)

UNR511H (UN511H)

UNR511L (UN511L)

UNR511M (UN511M)

UNR511N (UN511N)

UNR511T (UN511T)

UNR511V (UN511V)

UNR511Z (UN511Z)

47 kΩ

10 kΩ

22 kΩ

47 kΩ

10 kΩ

4.7 kΩ

22 kΩ

0.51 kΩ

1 kΩ

47 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

22 kΩ

2.2 kΩ

4.7 kΩ

10 kΩ

22 kΩ

47 kΩ



1: Base

2: Emitter

3: Collector

EIAJ: SC-70

SMini3-G1 Package

Internal Connection



5.1 kΩ

10 kΩ

22 kΩ

10 kΩ

4.7 kΩ

47 kΩ

2.2 kΩ

22 kΩ

R₁

R₂

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

−50

Collector current

I_C

P_T

−100

°C

150

Total power dissipation

Junction temperature

Storage temperature

T_j

150

T_stg

−55 to +150

°C

Note) The part numbers in the parenthesis show conventional part number.

Publication date: December 2003

SJH00022BED

12 3 4 5 6 7...17

中文翻译

下载PDF

与UNR5110|UN5110相关器件

型号	品牌	获取价格	描述	数据表
UNR5110G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
UNR5110GS	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
UNR5110Q	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SC-70
UNR5110R	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SC-70
UNR5110S	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SC-70
UNR5111	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR5111(UN5111)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR5111\|UN5111	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR5111G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
UNR5111GQ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO