Datasheet > UNR2224|UN2224

UNR2224|UN2224

更新时间： 2024-02-04 08:15:10

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
6页	145K
描述
Composite Device - Transistors with built-in Resistor

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中文翻译

获取价格

数据手册

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UNR2224|UN2224 数据手册

Transistors with built-in Resistor

UNR222x Series (UN222x Series)

Silicon NPN epitaxial planar type

Unit: mm

+0.10

For digital circuits

0.40

–0.05

+0.10

0.16

–0.06

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

• Mini type package allowing easy automatic insertion through tape

packing and magazine packing

(0.95) (0.95)

1.9 ^0.1

+0.20

2.90

–0.05

■ Resistance by Part Number

10˚

Marking Symbol (R₁)

(R₂)

• UNR2221 (UN2221)

• UNR2222 (UN2222)

• UNR2223 (UN2223)

• UNR2224 (UN2224)

2.2 kΩ

4.7 kΩ

10 kΩ

2.2 kΩ

4.7 kΩ

10 kΩ

1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

■ Absolute Maximum Ratings T_a= 25°C

Internal Connection

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

R₁

R₂

Collector current

I_C

P_T

500

°C

200

Total power dissipation

Junction temperature

Storage temperature

T_j

150

T_stg

−55 to +150

°C

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base UNR2221

I_C= 10 µA, I_E= 0

I_C= 2 mA, I_B= 0

V_CB= 50 V, I_E= 0

V_CE= 50 V, I_B= 0

V_EB= 6 V, I_C= 0

µA

I_CEO

I_EBO

cutoff current UNR2222

(Collector open) UNR2223/2224

Forward current UNR2221

h_FE

V_CE= 10 V, I_C= 100 mA



transfer ratio UNR2222

UNR2223/2224

Collector-emitter saturation voltage

Output voltage high-level

V_CE(sat)I_C= 10 mA, I_B= 5 mA

0.25

0.2

V_OH

V_OL

V_CC= 5 V, V_B= 0.5 V, R_L= 500 Ω

V_CC= 5 V, V_B= 3.5 V, R_L= 500 Ω

4.9

Output voltage low-level

Note) The part numbers in the parenthesis show conventional part number.

Publication date: December 2003

SJH00012CED

12 3 4 5 6

中文翻译

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与UNR2224|UN2224相关器件

型号	品牌	获取价格	描述	数据表
UNR2225	PANASONIC	获取价格	Silicon NPN epitaxial planar type
UNR2225(UN2225)	ETC	获取价格	UNR2225 (UN2225) - NPN Transistor with built-in Resistor
UNR2225\|UN2225	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR2226	PANASONIC	获取价格	Silicon NPN epitaxial planar type
UNR2226(UN2226)	ETC	获取价格	UNR2226 (UN2226) - NPN Transistor with built-in Resistor
UNR2226\|UN2226	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR2227	PANASONIC	获取价格	Silicon NPN epitaxial planar type
UNR2227(UN2227)	ETC	获取价格	複合デバイス－抵抗内蔵型トランジスタ
UNR2227\|UN2227	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR222X	PANASONIC	获取价格	Silicon NPN epitaxial planar type

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