Datasheet > UNR2225|UN2225

UNR2225|UN2225

更新时间： 2024-01-18 04:33:49

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	131K
描述
Composite Device - Transistors with built-in Resistor

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中文翻译

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数据手册

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UNR2225|UN2225 数据手册

Transistors with built-in Resistor

UNR2225 (UN2225), UNR2226 (UN2226),

UNR2227 (UN2227)

Unit: mm

Silicon NPN epitaxial planar type

+0.10

0.40

–0.05

+0.10

–0.06

0.16

For muting

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts

• Mini type package allowing easy automatic insertion through tape

packing and magazine packing

(0.95) (0.95)

1.9 ^0.1

+0.20

2.90

–0.05

10˚

■ Resistance by Part Number

Marking Symbol (R₁)

(R₂)



1: Base

2: Emitter

3: Collector

• UNR2225 (UN2225)

• UNR2226 (UN2226)

• UNR2227 (UN2227)

10 kΩ

4.7 kΩ

6.8 kΩ

EIAJ: SC-59

Mini3-G1 Package

6.8 kΩ

Internal Connection

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

R₁

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

R₂

600

Collector current

I_C

P_T

°C

200

Total power dissipation

Junction temperature

Storage temperature

T_j

150

T_stg

−55 to +150

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current UNR2227

I_C= 1 µA, I_E= 0

I_C= 2 mA, I_B= 0

I_E= 1 µA, I_C= 0

V_CB= 30 V, I_E= 0

V_EB= 5 V, I_C= 0

V_CE= 10 V, I_C= 100 mA

µA



I_EBO

h_FE

transfer ratio

UNR2225/2226

100

600

Collector-emitter saturation voltage

Input resistance UNR2226

UNR2227

V_CE(sat)I_C= 50 mA, I_B= 2.5 mA

R₁

−30%

4.7

6.8

+30%

kΩ

UNR2225

Resistance ratio UNR2227

R₁/R₂

0.8

1.0

1.2



Note) The part numbers in the parenthesis show conventional part number.

Publication date: December 2003

SJH00040CED

12 3 4 5

中文翻译

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与UNR2225|UN2225相关器件

型号	品牌	获取价格	描述	数据表
UNR2226	PANASONIC	获取价格	Silicon NPN epitaxial planar type
UNR2226(UN2226)	ETC	获取价格	UNR2226 (UN2226) - NPN Transistor with built-in Resistor
UNR2226\|UN2226	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR2227	PANASONIC	获取价格	Silicon NPN epitaxial planar type
UNR2227(UN2227)	ETC	获取价格	複合デバイス－抵抗内蔵型トランジスタ
UNR2227\|UN2227	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR222X	PANASONIC	获取价格	Silicon NPN epitaxial planar type
UNR2-T220	RIEDON	获取价格	Precision Foil Resistors
UNR2-T2200.523OHMS0.25%3PPM	VISHAY	获取价格	Fixed Resistor, Metal Foil, 15W, 0.523ohm, 0.25% +/-Tol, -3,3ppm/Cel, 3918
UNR2-T2200.542OHMS0.1%3PPM	VISHAY	获取价格	Fixed Resistor, Metal Foil, 15W, 0.542ohm, 0.1% +/-Tol, -3,3ppm/Cel, 3918

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