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UNR221N(UN221N) PDF预览

UNR221N(UN221N)

更新时间: 2024-02-08 12:08:11
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
17页 279K
描述
Composite Device - Transistors with built-in Resistor

UNR221N(UN221N) 数据手册

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Transistors with built-in Resistor  
UNR22XX Series (UN22XX Series)  
Silicon NPN epitaxial planer transistor  
Unit: mm  
+0.10  
–0.05  
0.40  
+0.10  
For digital circuits  
0.16  
–0.06  
3
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
1
2
Mini type package, allowing downsizing of the equipment and  
(0.95) (0.95)  
automatic insertion through tape packing and magazine packing.  
1.9±0.1  
+0.20  
2.90  
–0.05  
Resistance by Part Number  
10˚  
Marking Symbol (R1)  
(R2)  
UNR2210 (UN2210)  
UNR2211 (UN2211)  
UNR2212 (UN2212)  
UNR2213 (UN2213)  
UNR2214 (UN2214)  
UNR2215 (UN2215)  
UNR2216 (UN2216)  
UNR2217 (UN2117)  
UNR2218 (UN2218)  
UNR2219 (UN2219)  
UNR221D (UN221D)  
UNR221E (UN221E)  
UNR221F (UN221F)  
UNR221K (UN221K)  
UNR221L (UN221L)  
8L  
8A  
8B  
8C  
8D  
8E  
8F  
8H  
8I  
8K  
8M  
8N  
8O  
8P  
8Q  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
47 kΩ  
47 kΩ  
4.7 kΩ  
10 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
22 kΩ  
2.2 kΩ  
4.7 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
1: Base  
2: Emitter  
3: Collector  
EIAJ: SC-59  
Mini3-G1 Package  
Internal Connection  
5.1 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
4.7 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
47 kΩ  
2.2 kΩ  
22 kΩ  
R1  
B
C
E
R2  
UNR221M (UN221M) EL  
UNR221N (UN221N)  
UNR221T (UN221T)  
UNR221V (UN221V)  
UNR221Z (UN221Z)  
EX  
EZ  
FD  
FF  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
Unit  
V
50  
50  
V
100  
mA  
mW  
°C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
200  
Tj  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: January 2002  
SJH00010BED  
1

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