Transistors with built-in Resistor
UNR222x Series (UN222x Series)
Silicon NPN epitaxial planar type
Unit: mm
+0.10
For digital circuits
0.40
3
–0.05
+0.10
0.16
–0.06
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
1
2
• Mini type package allowing easy automatic insertion through tape
packing and magazine packing
(0.95) (0.95)
1.9 0.1
+0.20
2.90
–0.05
■ Resistance by Part Number
10˚
Marking Symbol (R1)
(R2)
• UNR2221 (UN2221)
• UNR2222 (UN2222)
• UNR2223 (UN2223)
• UNR2224 (UN2224)
9A
9B
9C
9D
2.2 kΩ
4.7 kΩ
10 kΩ
2.2 kΩ
2.2 kΩ
4.7 kΩ
10 kΩ
10 kΩ
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■ Absolute Maximum Ratings Ta = 25°C
Internal Connection
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
50
50
R1
B
C
E
V
R2
Collector current
IC
PT
500
mA
mW
°C
200
Total power dissipation
Junction temperature
Storage temperature
Tj
150
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
ICBO
Conditions
Min
50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base UNR2221
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
50
V
1
1
5
2
1
µA
µA
mA
ICEO
IEBO
cutoff current UNR2222
(Collector open) UNR2223/2224
Forward current UNR2221
hFE
VCE = 10 V, IC = 100 mA
40
50
60
transfer ratio UNR2222
UNR2223/2224
Collector-emitter saturation voltage
Output voltage high-level
VCE(sat) IC = 10 mA, IB = 5 mA
0.25
0.2
V
V
V
VOH
VOL
VCC = 5 V, VB = 0.5 V, RL = 500 Ω
VCC = 5 V, VB = 3.5 V, RL = 500 Ω
4.9
Output voltage low-level
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00012CED
1