5秒后页面跳转
UNR1223(UN1223) PDF预览

UNR1223(UN1223)

更新时间: 2024-11-25 23:39:27
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
5页 131K
描述
Composite Device - Transistors with built-in Resistor

UNR1223(UN1223) 数据手册

 浏览型号UNR1223(UN1223)的Datasheet PDF文件第2页浏览型号UNR1223(UN1223)的Datasheet PDF文件第3页浏览型号UNR1223(UN1223)的Datasheet PDF文件第4页浏览型号UNR1223(UN1223)的Datasheet PDF文件第5页 
Transistors with built-in Resistor  
UNR1221/1222/1223/1224 (UN1221/1222/1223/1224)  
Unit: mm  
Silicon NPN epitaxial planar transistor  
For digital circuits  
2.5 0.1  
6.9 0.1  
(1.5)  
(1.0)  
(1.5)  
Features  
I
G
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
R 0.9  
R 0.7  
G
M type package allowing easy automatic and manual insertion as  
well as stand-alone fixing to the printed circuit board.  
Resistance by Part Number  
I
(R1)  
(R2)  
(0.85)  
0.55 0.1  
0.45 0.05  
G
G
G
G
UNR1221  
UNR1222  
UNR1223  
UNR1224  
2.2k  
4.7kΩ  
10kΩ  
2.2kΩ  
2.2kΩ  
4.7kΩ  
10kΩ  
10kΩ  
3
2
1
1: Base  
2: Collector  
3: Emitter  
(2.5) (2.5)  
Absolute Maximum Ratings (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
M-A1 Package  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
50  
50  
Internal Connection  
V
500  
mA  
mW  
˚C  
C
E
R1  
B
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
600  
Tj  
150  
R2  
Tstg  
–55 to +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
I
Parameter  
Symbol  
Conditions  
min  
typ  
max  
Unit  
ICBO  
VCB = 50V, IE = 0  
1
1
5
2
1
µA  
Collector cutoff current  
ICEO  
VCE = 50V, IB = 0  
VEB = 6V, IC = 0  
µA  
UNR1221  
Emitter  
UNR1222  
IEBO  
mA  
cutoff  
current  
UNR1223/1224  
Collector to base voltage  
Collector to emitter voltage  
Forward UNR1221  
VCBO  
VCEO  
IC = 10µA, IE = 0  
50  
50  
40  
50  
60  
V
V
IC = 2mA, IB = 0  
current  
transfer  
UNR1222  
hFE  
VCE = 10V, IC = 100mA  
UNR1223/1224  
ratio  
Collector to emitter saturation voltage VCE(sat)  
IC = 100mA, IB = 5mA  
0.25  
0.2  
V
V
Output voltage high level  
Output voltage low level  
Transition frequency  
VOH  
VOL  
fT  
VCC = 5V, VB = 0.5V, RL = 500Ω  
VCC = 5V, VB = 3.5V, RL = 500Ω  
VCB = 10V, IE = –50mA, f = 200MHz  
4.9  
V
200  
2.2  
4.7  
10  
MHz  
UNR1221/1224  
Input  
UNR1222  
R1  
(–30%)  
0.8  
(+30%)  
1.2  
kΩ  
resis-  
tance  
UNR1223  
Resistance ratio  
1.0  
0.22  
R1/R2  
UNR1224  
Note) The part numbers in the parenthesis show conventional part number.  
1

与UNR1223(UN1223)相关器件

型号 品牌 获取价格 描述 数据表
UNR1224 ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SC-71
UNR1224(UN1224) ETC

获取价格

複合デバイス - 抵抗内蔵型トランジスタ
UNR1231 PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC
UNR1231(UN1231) ETC

获取价格

複合デバイス - 抵抗内蔵型トランジスタ
UNR1231/1231A(UN1231/1231A) ETC

获取价格

UNR1231/1231A (UN1231/1231A) - NPN Transistor with built-in Resistor
UNR1231|UN1231 ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNR1231A(UN1231A) ETC

获取价格

複合デバイス - 抵抗内蔵型トランジスタ
UNR1231A|UN1231A ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNR-2.5/10-D12 MURATA

获取价格

DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid, PACKAGE-6
UNR-2.5/10-D3SM-C MURATA

获取价格

DC-DC Regulated Power Supply Module, 1 Output, Hybrid, ROHS COMPLIANT, METAL, SMT-9