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UNR1218 PDF预览

UNR1218

更新时间: 2024-11-18 22:17:23
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
14页 340K
描述
Silicon NPN epitaxial planar type

UNR1218 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84其他特性:BUILT-IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):20
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN最大功率耗散 (Abs):0.4 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

UNR1218 数据手册

 浏览型号UNR1218的Datasheet PDF文件第2页浏览型号UNR1218的Datasheet PDF文件第3页浏览型号UNR1218的Datasheet PDF文件第4页浏览型号UNR1218的Datasheet PDF文件第5页浏览型号UNR1218的Datasheet PDF文件第6页浏览型号UNR1218的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR121x Series (UN121x Series)  
Silicon NPN epitaxial planar type  
Unit: mm  
For digital circuits  
2.5 0.1  
6.9 0.1  
(1.5)  
(1.5)  
(1.0)  
Features  
R 0.9  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts  
R 0.7  
M type package allowing easy automatic and manual insertion as  
well as stand-alone fixing to the printed circuit board  
(0.85)  
0.45 0.05  
Resistance by Part Number  
0.55 0.1  
(R1)  
(R2)  
UNR1210 (UN1210)  
UNR1211 (UN1211)  
UNR1212 (UN1212)  
UNR1213 (UN1213)  
UNR1214 (UN1214)  
UNR1215 (UN1215)  
UNR1216 (UN1216)  
UNR1217 (UN1217)  
UNR1218 (UN1218)  
UNR1219 (UN1219)  
UNR121D (UN121D)  
UNR121E (UN121E)  
UNR121F (UN121F)  
UNR121K (UN121K)  
UNR121L (UN121L)  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
47 kΩ  
47 kΩ  
4.7 kΩ  
10 kΩ  
4.7 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
3
2
1
1: Base  
2: Collector  
3: Emitter  
(2.5) (2.5)  
M-A1 Package  
Internal Connection  
R1  
B
5.1 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
4.7 kΩ  
4.7 kΩ  
C
E
R2  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
100  
mA  
mW  
°C  
400  
Total power dissipation  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: October 2003  
SJH00003BED  
1

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