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UNR1217 PDF预览

UNR1217

更新时间: 2024-11-18 22:17:23
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管开关
页数 文件大小 规格书
14页 340K
描述
Silicon NPN epitaxial planar type

UNR1217 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):160JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

UNR1217 数据手册

 浏览型号UNR1217的Datasheet PDF文件第2页浏览型号UNR1217的Datasheet PDF文件第3页浏览型号UNR1217的Datasheet PDF文件第4页浏览型号UNR1217的Datasheet PDF文件第5页浏览型号UNR1217的Datasheet PDF文件第6页浏览型号UNR1217的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR121x Series (UN121x Series)  
Silicon NPN epitaxial planar type  
Unit: mm  
For digital circuits  
2.5 0.1  
6.9 0.1  
(1.5)  
(1.5)  
(1.0)  
Features  
R 0.9  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts  
R 0.7  
M type package allowing easy automatic and manual insertion as  
well as stand-alone fixing to the printed circuit board  
(0.85)  
0.45 0.05  
Resistance by Part Number  
0.55 0.1  
(R1)  
(R2)  
UNR1210 (UN1210)  
UNR1211 (UN1211)  
UNR1212 (UN1212)  
UNR1213 (UN1213)  
UNR1214 (UN1214)  
UNR1215 (UN1215)  
UNR1216 (UN1216)  
UNR1217 (UN1217)  
UNR1218 (UN1218)  
UNR1219 (UN1219)  
UNR121D (UN121D)  
UNR121E (UN121E)  
UNR121F (UN121F)  
UNR121K (UN121K)  
UNR121L (UN121L)  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
47 kΩ  
47 kΩ  
4.7 kΩ  
10 kΩ  
4.7 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
3
2
1
1: Base  
2: Collector  
3: Emitter  
(2.5) (2.5)  
M-A1 Package  
Internal Connection  
R1  
B
5.1 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
4.7 kΩ  
4.7 kΩ  
C
E
R2  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
100  
mA  
mW  
°C  
400  
Total power dissipation  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: October 2003  
SJH00003BED  
1

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