Datasheet > UNA0236

UNA0236

更新时间： 2024-11-14 23:39:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关光电二极管
页数	文件大小	规格书
5页	107K
描述
Composite Device - Small Signal Transistor Arrays

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UNA0236 数据手册

Small Signal Transistor Arrays

UNA0236

Silicon PNP epitaxial planar transistor (2 elements)

Silicon NPN epitaxial planar transistor (2 elements)

Unit: mm

For motor drives

+0.1

–0.0

0.2

0.4 ^0.1

3 2

For small motor drive circuits in general

(0.5)

■ Features

• Small and lightweight

• Low power consumption

• Low-voltage drive

0.9 ^0.1

6.5 0.3

• With 4 elements incorporated

12˚

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

PNP

Collector-base voltage

(Emitter open)

V_CBO

−12

1: Emitter

2: Base

5: Emitter

6: Emitter

9: Base

10: Emitter

3: Collector 7: Base

Collector-emitter voltage

(Base open)

V_CEO

V_EBO

−10

−7

4: Base

8: Collector

SO10-G1 Package

Emitter-base voltage

(Collector open)

Marking Symbol: UN236

Internal Connection

Collector current

I_C

I_CP

−1

−2.5

Peak collector current

NPN

Collector-base voltage

(Emitter open)

V_CBO

Collector-emitter voltage

(Base open)

V_CEO

V_EBO

Emitter-base voltage

(Collector open)

Collector current

I_C

I_CP

P_T

2.5

9 10

Peak collector current

Overall Total power dissipation ^*

Junction temperature

0.5

°C

T_j

150

Storage temperature

T_stg

−55 to +150

Note) : When the dissipation on one device is T_C= 25°C

Publication date: December 2002

SJK00055AED

12 3 4 5

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