5秒后页面跳转
UNA222 PDF预览

UNA222

更新时间: 2024-02-19 16:35:15
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
5页 133K
描述
Small Signal Bipolar Transistor, 3A I(C), 10V V(BR)CEO, 6-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SO14-G1, 14 PIN

UNA222 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G14
针数:14Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.79
其他特性:BUILT IN BIAS RESISTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:10 V配置:2 BANKS, COMMON EMITTER, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G14
元件数量:6端子数量:14
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN AND PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

UNA222 数据手册

 浏览型号UNA222的Datasheet PDF文件第2页浏览型号UNA222的Datasheet PDF文件第3页浏览型号UNA222的Datasheet PDF文件第4页浏览型号UNA222的Datasheet PDF文件第5页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Small Signal Transistor Arrays  
UNA0222 (UN222)  
Silicon PNP epitaxial planar type (3 elements)  
Silicon NPN epitaxial planar type (3 elements)  
Unit: mm  
For motor drives  
+0.1  
–0.0  
0.2  
0.4 0.1  
14 13121110 9  
8
Features  
Small and lightweight  
Low power consumption (low VCE(sat) transistor used)  
Low voltage drive  
Transistors with built-in resistor with 6 elements incorporated  
0.5  
1 2  
3
4 5 6 7  
0.9 0.1  
6.5 0.3  
Absolute Maximum Ratings Ta = 25°C  
12°  
Parameter  
Symbol  
Rating  
Unit  
PNP  
NPN  
Collector-base voltage  
(Emitter open)  
VCBO  
10  
V
1: Collector 5: Collector  
2: Base 6: Base  
3: Collector 7: Emitter  
4: Base  
9: Base  
10: Collector 14: Emitter  
11: Base  
13: Base  
Collector-emitter voltage  
(Base open)  
VCEO  
10  
V
8: Collector 12: Collector  
Collector current  
IC  
ICP  
3  
4  
10  
A
A
V
SO14-G1 Package  
Peak collector current  
Marking Symbol: UN222  
Internal Connection  
Collector-base voltage  
(Emitter open)  
VCBO  
Collector-emitter voltage  
(Base open)  
VCEO  
10  
V
14 13 12 11 10  
9 8  
Collector current  
IC  
ICP  
PT  
3
A
A
Peak collector current  
4
0.5  
Overall Total power dissipation *  
Junction temperature  
W
°C  
°C  
Tj  
150  
Storage temperature  
Tstg  
55 to +150  
1
2 3 4 5 6 7  
Note) : When the dissipation on one device is TC = 25°C  
*
Note) The part number in the parenthesis shows conventional part number.  
Publication date: March 2004  
SJK00046BED  
1

与UNA222相关器件

型号 品牌 描述 获取价格 数据表
UNA350PB TDK Unit type, Multi Output (5CH), Output: 300W, +3.3/+5/+12/-12/+5V

获取价格

UNA350PB/D TDK Unit type, Multi Output (5CH), Output: 300W, +3.3/+5/+12/-12/+5V

获取价格

UNA350PN TDK Unit type, Multi Output (5CH), Output: 300W, +3.3/+5/+12/-12/+5V

获取价格

UNA-401M UNSEMI Spark Gap Protectors

获取价格

UNA-471M UNSEMI Spark Gap Protectors

获取价格

UNA-BT242R3 TDK Lead-acid battery unit, Input: 24VDC, 2.3Ah

获取价格