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UN5211

更新时间: 2024-02-13 12:24:42
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
17页 236K
描述
Silicon NPN epitaxial planer transistor

UN5211 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):35
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UN5211 数据手册

 浏览型号UN5211的Datasheet PDF文件第2页浏览型号UN5211的Datasheet PDF文件第3页浏览型号UN5211的Datasheet PDF文件第4页浏览型号UN5211的Datasheet PDF文件第5页浏览型号UN5211的Datasheet PDF文件第6页浏览型号UN5211的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/  
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z  
Silicon NPN epitaxial planer transistor  
Unit: mm  
For digital circuits  
2.1±0.1  
0.425  
1
1.25±0.1  
0.425  
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
S-Mini type package, allowing automatic insertion through tape  
3
packing and magazine packing.  
2
Resistance by Part Number  
Marking Symbol (R1)  
(R2)  
10k  
22kΩ  
47kΩ  
47kΩ  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
4.7kΩ  
4.7kΩ  
47kΩ  
47kΩ  
47kΩ  
2.2kΩ  
22kΩ  
UN5211  
UN5212  
UN5213  
UN5214  
UN5215  
UN5216  
UN5217  
UN5218  
UN5219  
UN5210  
UN521D  
UN521E  
UN521F  
UN521K  
UN521L  
UN521M  
UN521N  
UN521T  
UN521V  
UN521Z  
8A  
8B  
8C  
8D  
8E  
8F  
10kΩ  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
10kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
22kΩ  
2.2kΩ  
4.7kΩ  
0.2±0.1  
1 : Base  
2 : Emitter  
3 : Collector  
EIAJ : SC–70  
S–Mini Type Package  
8H  
8I  
Internal Connection  
8K  
8L  
8M  
8N  
8O  
8P  
8Q  
EL  
EX  
EZ  
FD  
FF  
C
E
R1  
B
R2  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
50  
50  
V
100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
150  
Tj  
150  
Tstg  
–55 to +150  
˚C  
1

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