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UMH6TR PDF预览

UMH6TR

更新时间: 2024-01-28 09:45:28
品牌 Logo 应用领域
罗姆 - ROHM 晶体数字晶体管
页数 文件大小 规格书
2页 37K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, MINIMOLD, UM6, 6 PIN

UMH6TR 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
Is Samacsys:N其他特性:DIGITAL, BUILT IN BIAS RESISTOR
最大集电极电流 (IC):0.03 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):68
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

UMH6TR 数据手册

 浏览型号UMH6TR的Datasheet PDF文件第2页 
EMH6 / UMH6N / IMH6A  
Transistors  
General purpose (dual digital transistors)  
EMH6 / UMH6N / IMH6A  
zExternal dimensions (Units : mm)  
zFeatures  
1) Two DTC144E chips in a EMT or UMT or SMT  
package.  
EMH6  
( )  
3
( )  
2
( )  
1
( )  
4
( )  
5
( )  
6
1.2  
1.6  
zEquivalent circuit  
EMH6 / UMH6N  
IMH6A  
(4) (5)  
(3)  
(2)  
(1)  
(6)  
R1  
R1  
ROHM : EMT6  
Each lead has same dimensions  
R2  
R2  
R2  
R2  
R1  
R1  
UMH6N  
(4) (5)  
(6)  
(3) (2)  
(1)  
1.25  
2.1  
zPackage, marking, and packaging specifications  
Type  
Package  
EMH6  
EMT6  
H6  
UMH6N  
UMT6  
H6  
IMH6A  
SMT6  
H6  
Marking  
0.1Min.  
Code  
T2R  
TR  
T108  
3000  
ROHM : UMT6  
EIAJ : SC-88  
Each lead has same dimensions  
Basic ordering unit (pieces)  
8000  
3000  
IMH6A  
zAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Supply voltage  
Symbol  
Limits  
Unit  
VCC  
50  
40  
V
1.6  
2.8  
Input voltage  
VIN  
V
10  
Output current  
Power dissipation  
I
O
30  
mA  
EMH6 / UMH6N  
IMH6A  
150(TOTAL)  
300(TOTAL)  
150  
1
2
Pd  
mW  
0.3to0.6  
Junction temperature  
Storage temperature  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
Tj  
°C  
°C  
ROHM : SMT6  
EIAJ : SC-74  
Each lead has same dimensions  
Tstg  
55~+150  
zElectrical characteristics (Ta = 25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
0.5  
Conditions  
=100µA  
=2mA  
=10mA/0.5mA  
=5V  
CC=50V, V  
/V =5mA/5V  
Unit  
V
V
I (off)  
3
V
CC=5V, I  
=0.3V, I  
/I  
O
Input voltage  
VI (on)  
VO  
O
Output voltage  
Input current  
VO (on)  
0.1  
0.3  
0.18  
0.5  
V
mA  
µA  
I
O I  
I
I
V
V
I
Output current  
DC current gain  
Input resistance  
Resistance ratio  
I
O (off)  
I=0V  
G
I
68  
32.9  
0.8  
I
O
O
R1  
47  
1
61.1  
1.2  
kΩ  
R2  
/ R1  
Transition frequency  
f
T
250  
MHz  
V
CE=10V, I  
E
=−5mA, f=100MHz  
Transition frequency of the device.  

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