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UMH7N

更新时间: 2024-09-23 22:17:27
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管数字晶体管
页数 文件大小 规格书
1页 54K
描述
General purpose (dual digital transistors)

UMH7N 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.77最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):100元件数量:2
极性/信道类型:NPN子类别:BIP General Purpose Small Signal
表面贴装:YES晶体管元件材料:SILICON
Base Number Matches:1

UMH7N 数据手册

  
UMH7N / IMH7A  
Transistors  
General purpose (dual digital transistors)  
UMH7N / IMH7A  
!Features  
!External dimensions (Units : mm)  
1) Includes two DTC143T transistors in a single UMT  
package.  
UMH7N  
1.25  
2.1  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Limits  
Unit  
V
VCBO  
VCEO  
VEBO  
50  
50  
0.1Min.  
V
Each lead has same dimensions  
5
V
ROHM : UMT6  
EIAJ : SC-88  
I
C
100  
mA  
UMH7N  
FMG13, IMH7A  
150 (TOTAL)  
300 (TOTAL)  
150  
1
2
Collector power  
dissipation  
Pc  
mW  
Junction temperature  
Storage temperature  
Tj  
˚C  
˚C  
Tstg  
55∼+150  
IMH7A  
1
2
120mW per element must not be exceeded.  
200mW per element must not be exceeded.  
1.6  
2.8  
!Package, marking, and Packaging specifications  
Part No.  
UMH7N  
UMT6  
H7  
IMH7A  
SMT6  
H7  
0.3to0.6  
Package  
Marking  
Each lead has same dimensions  
TR  
T108  
3000  
Code  
Basic ordering unit (pieces)  
3000  
ROHM : SMT6  
EIAJ : SC-74  
!Circuit diagram  
UMH7N  
IMH7A  
R1  
R1  
R1  
R1  
!Electrical characteristics (Ta=25°C)  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
BVCBO  
BVCEO  
BVEBO  
50  
50  
5
0.5  
0.5  
600  
0.3  
6.11  
V
V
I
I
I
C
=50µA  
=1mA  
C
V
E
=50µA  
CB=50V  
EB=4V  
I
CBO  
EBO  
FE  
CE(sat)  
100  
µA  
µA  
V
V
V
Emitter cutoff current  
I
h
250  
CE / IC=5V / 1mA  
DC current transfer ratio  
V
V
I
C
/ I  
B
=5mA / 0.25mA  
Collector-emitter saturation voltage  
Input resistance  
R1  
3.29  
4.7  
kΩ  

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