Datasheet > UMH7N

UMH7N

更新时间： 2024-09-25 14:54:31

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	577K
描述
SOT-363

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中文翻译

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数据手册

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UMH7N 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Digital Transistors (Built-in Resistors)

UMH7N

Dual Digital Transistors (NPN+NPN)

SOT-363

FEATURES

Two DTC143T chips in a package

Mounting possible with SOT-363 automatic mounting machines

Transistor elements are independent, eliminating interference

Mounting cost and area be cut in half

Marking: H7

Absolute maximum ratings(Ta=25℃)

Parameter

Symbol

Value

100

150

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_C

Collector Power dissipation

P_C

Operation Junction and

Storage Temperature Range

℃

T_J,T_stg

-55~+150

Electrical characteristics (Ta=25℃)

Symb

Parameter

Min.

Typ

Max. Unit

Conditions

I_C=50μA

I_C=1mA

I_E=50μA

V_CB=50V

V_EB=4V

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_EBO

V_CE(sat)

h_FE

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

DC current transfer ratio

0.5

0.3

μA

I_C=5mA,I_B=0.25mA

V_CE=5V,I_C=1mA

100

3.29

600

6.11

Input resistance

R₁

4.7

KΩ

Transition frequency

f_T

250

MHz V_CE=10V ,I_E=-5mA,f=100MHz

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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