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UMD12N PDF预览

UMD12N

更新时间: 2024-11-05 22:17:27
品牌 Logo 应用领域
罗姆 - ROHM 晶体数字晶体管
页数 文件大小 规格书
4页 80K
描述
Power management (dual digital transistors)

UMD12N 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.77
最大集电极电流 (IC):0.1 AJESD-609代码:e2
极性/信道类型:NPN/PNP最大功率耗散 (Abs):0.3 W
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin/Copper (Sn/Cu)晶体管元件材料:SILICON
Base Number Matches:1

UMD12N 数据手册

 浏览型号UMD12N的Datasheet PDF文件第2页浏览型号UMD12N的Datasheet PDF文件第3页浏览型号UMD12N的Datasheet PDF文件第4页 
EMD12 / UMD12N  
Transistors  
Power management  
(dual digital transistors)  
EMD12 / UMD12N  
zFeatures  
EMD12  
1) Both the DTA144E and DTC144E in a EMT or UMT  
package.  
( )  
3
( )  
2
( )  
1
( )  
4
( )  
5
( )  
6
1.2  
1.6  
zEquivalent circuit  
(3)  
(2)  
(1)  
ROHM : EMT6  
UMD12N  
Each lead has same dimensions  
R
1
R2  
DTr1  
DTr2  
R2  
R1  
(4)  
(5)  
(6)  
R
R
=47kΩ  
2
1=47kΩ  
1.25  
2.1  
zPackage, marking, and packaging specifications  
0.1Min.  
Type  
Package  
EMD12  
EMT6  
D12  
UMD12N  
UMT6  
D12  
ROHM : UMT6  
EIAJ : SC-88  
Each lead has same dimensions  
Marking  
Code  
T2R  
TR  
Basic ordering unit (pieces)  
8000  
3000  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Supply voltage  
Symbol  
Limits  
Unit  
V
VCC  
50  
40  
10  
Input voltage  
VIN  
V
I
C
100  
mA  
mA  
Output current  
I
O
30  
Power dissipation  
Pd  
Tj  
150(TOTAL)  
150  
mW 1  
°C  
°C  
Junction temperature  
Storage temperature  
Tstg  
55~  
+150  
1 120mW per element must not be exceeded.  
PNP type negative symbols have been omitted  
zExternal dimensions (Units : mm)  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
0.5  
Unit  
V
Conditions  
VI (off)  
3
V
CC=5/5V, I  
=0.3/0.3V, I  
=10/10mA, I  
=5/5V  
CC=50/50V, V  
=5/5mA, V =5/5V  
CE=10/10V, I  
O
=100/100µA  
=2/2mA  
=0.5/0.5mA  
Input voltage  
V
I (on)  
V
V
O
O
Output voltage  
Input current  
V
O (on)  
0.1  
0.3  
0.18  
0.5  
V
I
O
I
I
I
mA  
µA  
V
V
I
Output current  
DC current gain  
Transition frequency  
Input resistance  
Resistance ratio  
I
O (off)  
I
=0V  
G
I
68  
I
O
O
f
T
32.9  
0.8  
250  
47  
1
61.1  
MHz  
kΩ  
V
E
=−5/5mA, f=100MHz  
R1  
R2 / R1  
1.2  
Transition frequency of the device. PNP type negative symbols have been omitted  
Rev.A  
1/3  

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