Datasheet > UMA1N

UMA1N

更新时间： 2024-11-29 07:05:31

品牌	Logo	应用领域
科信 - KEXIN		晶体数字晶体管
页数	文件大小	规格书
3页	182K
描述
Complex Digital Transistors

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中文翻译

获取价格

数据手册

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UMA1N 数据手册

SMD Type

Transistors

Complex Digital Transistors

UMA1N

Features

Mounting Cost and Area Can Be Cut In Half.

Emitter-common Type.

PNP Epitaxial Planar Silicon Transistor.

Absolute Maximum Ratings Ta = 25

< For Tr1 and Tr2 in common >

Parameter

Symbol

V^CC

V^IN

Rating

-50

Unit

Supply Voltage

Input Voltage

-40 to +10

-30

Output Current

I^O

Collector Current

Power Dissipation

Junction temperature

Storage temperature

I^C(Max)

P^D*

T^j

-100

150

Tstg

-55 to +150

* 120mW per element must not be exceeded.

Electrical Characteristics Ta = 25

< For Tr1 and Tr2 in common >

Parameter

Symbol

Testconditons

Min

-3

Typ

-0.1

Max

-0.5

Unit

V^I(off)

V^I(on)

VCC = -5V , IO = -100

VO = -0.2V , IO = -5mA

Input Voltage

Output Voltage

V^O(on)IO/II = -10mA/-0.5mA

-0.3

Input Current

I^I

I^O(off)

G^I

VI = -5V

-0.36 mA

Output Current

VCC = -50V , VI = 0V

VO = -5V , IO = -5mA

-0.5

DC Current Gain

15.4

0.8

Input Resistance

R¹

28.6

1.2

Resistance Ratio

R2/R1

f^T*

Transistion Frequency

* Characteristics of built-in transistor

VCE = -10V , IE = 5mA , f = 100MHz

250

MHz

Marking

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中文翻译

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