Datasheet > UMA1N_1

UMA1N_1

更新时间： 2024-11-06 06:02:35

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
3页	64K
描述
−100mA / −50V Complex digital transistors (with built-in resistors)

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中文翻译

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数据手册

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UMA1N_1 数据手册

UMA1N/FMA1A

Transistors

−

100mA / −50V Complex digital transistors

(with built-in resistors)

UMA1N/FMA1A

zApplications

zExternal dimensions (Unit : mm)

Inverter, Interface, Driver

2.0

UMA1N

zFeatures

1.3

0.9

0.7

1) Two DTA124E chips in a UMT or SMT package.

2) Mounting cost and area can be cut in half.

3) Emitter-common type.

0.65 0.65

(

)

(

)

( )

zStructure

0.15

Each lead has same dimensions

0.2

ROHM : UMT5

EIAJ : SC-88A

PNP epitaxial planar silicon transistor

(dual chips ; each with two built-in resistors)

Abbreviated symbol : A1

2.9

FMA1A

1.1

0.8

1.9

0.95

zPackaging specifications

Package

UMT5

Taping

SMT5

Taping

T148

( )

Packaging type

Code

( )

Basic ordering

unit (pieces)

3000

Part No.

UMA1N

FMA1A

0.3

0.15

ROHM : SMT5

EIAJ : SC-74A

−

Each lead has same dimensions

Abbreviated symbol : A1

−

zAbsolute maximum ratings (Ta=25°C)

zEquivalent circuits

UMA1N

(5)

(4)

Parameter

Supply voltage

Symbol

Limits

Unit

−50

−40 to +10

−30

(1) IN

(2) GND

(3) IN

DTr1

DTr2

Input voltage

Output current

Collector current

(4) OUT

(5) OUT

C(MAX)

−100

(2)

(3)

(1)

∗1

∗2

UMA1N

FMA1A

150(TOTAL)

300(TOTAL)

150

Power dissipation

FMA1A

(1)

Junction temperature

Storage temperature

°C

(2)

Tstg

−55 to +150

(1) OUT

(2) OUT

(3) IN

(4) GND

(5) IN

120mW per element must not be exceeded.

200mW per element must not be exceeded.

∗

DTr2

DTr1

(5)

(3)

(4)

=22kΩ

Rev.B

1/2

12 3

中文翻译

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