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UHF20FCT PDF预览

UHF20FCT

更新时间: 2024-11-04 11:57:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 92K
描述
Dual Common-Cathode Ultrafast Recovery Rectifier

UHF20FCT 数据手册

 浏览型号UHF20FCT的Datasheet PDF文件第2页浏览型号UHF20FCT的Datasheet PDF文件第3页浏览型号UHF20FCT的Datasheet PDF文件第4页 
New Product  
UHF20FCT  
Vishay General Semiconductor  
Dual Common-Cathode Ultrafast Recovery Rectifier  
FEATURES  
• Oxide planar chip junction  
ITO-220AB  
• Ultrafast recovery times  
• Soft recovery characteristics  
• Low switching losses, high efficiency  
• High forward surge capability  
3
• Solder dip 260 °C, 40 s  
2
1
• Component in accordance to RoHS 2002/95/EC  
UHF20FCT  
and WEEE 2002/96/EC  
PIN 1  
PIN 3  
PIN 2  
TYPICAL APPLICATIONS  
For use in high frequency power factor correctors,  
switching mode power supplies, freewheeling diodes  
and secondary dc-to-dc rectification application.  
PRIMARY CHARACTERISTICS  
IF(peak)  
10 A x 2  
MECHANICAL DATA  
Case: ITO-220AB  
Epoxy meets UL 94V-0 flammability rating  
VRRM  
300 V  
180 A  
25 ns  
IFSM  
trr  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
VF at IF = 10 A  
TJ max.  
0.85 V  
175 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
UHF20FCT  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
300  
V
Maximum DC working forward current  
at TC = 125 °C  
per device  
per diode  
20  
10  
IF(peak)  
A
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
per diode  
IFSM  
180  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 175  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
MAX.  
UNIT  
IF = 5.0 A  
IF = 10.0 A  
0.96  
1.02  
-
T
A = 25 °C  
1.20  
Maximum instantaneous forward voltage per  
diode (1)  
VF  
V
IF = 5.0 A  
IF = 10.0 A  
0.77  
0.85  
-
-
T
A = 125 °C  
A = 25 °C  
T
0.06  
25  
5
150  
Maximum reverse current per diode (2)  
VR = 300 V  
IR  
µA  
TA = 125 °C  
Document Number: 89064  
Revision: 13-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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