Datasheet > UGPP10G

UGPP10G

更新时间： 2024-11-11 06:01:27

品牌	Logo	应用领域
海湾 - GULFSEMI		/
页数	文件大小	规格书
2页	125K
描述
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE：200 TO 600V CURRENT： 1.0A

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数据手册

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UGPP10G 数据手册

UGPP10D THRU UGPP10J

ULTRAFAST EFFICIENT

PLASTIC SILICON RECTIFIER

VOLTAGE：200 TO 600V

CURRENT： 1.0A

DO –41\DO-204AL

FEATURE

Low power loss

High surge capability

Glass passivated chip junction

Ultra-fast recovery time for high efficiency

High temperature soldering guaranteed

250℃/10sec/0.375″lead length at 5 lbs tension

MECHANICAL DATA

Terminal：Plated axial leads solderable per

MIL-STD 202E, method 208C

Case：Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity：color band denotes cathode

Mounting position：any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated)

units

SYMBOL

UGPP10D

UGPP10G

UGPP10J

Vrrm

Vrms

Vdc

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

200

140

200

400

280

400

600

420

600

Maximum DC blocking Voltage

Maximum Average Forward Rectified

Current 3/8″lead length at Ta =55℃

Peak Forward Surge Current 8.3ms single

half sine-wave superimposed on rated load

Maximum Forward Voltage at Forward current

1A Peak

If(av)

Ifsm

1.0

30.0

1.0

1.8

10.0

100.0

μA

Maximum DC Reverse Current

at rated DC blocking voltage

Ta =25℃

Ta =125℃

Trr

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance

Typical Thermal Resistance

(Note 2)

(Note 3)

17.0

R(ja)

Tstg,Tj

50.0

℃/W

℃

Storage and Operating Junction Temperature

-55 to +150

Note：

1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A

2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

3. Thermal Resistance from Junction to Ambient at 3/8″lead length, P.C. Board Mounted

Rev.1

www.gulfsemi.com

中文翻译

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