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UF840G-TQ2-T PDF预览

UF840G-TQ2-T

更新时间: 2024-02-27 00:32:39
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 427K
描述
8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET

UF840G-TQ2-T 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
风险等级:5.61Is Samacsys:N
其他特性:AVALANCE RATED雪崩能效等级(Eas):510 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (ID):8 A最大漏源导通电阻:0.85 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):32 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

UF840G-TQ2-T 数据手册

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UNISONIC TECHNOLOGIES CO., LTD  
UF840  
Power MOSFET  
8A, 500V, 0.85Ω, N-CHANNEL  
POWER MOSFET  
„
DESCRIPTION  
The N-Channel enhancement mode silicon gate power MOSFET  
is designed for high voltage, high speed power switching  
applications such as switching regulators, switching converters,  
solenoid, motor drivers, relay drivers.  
„
FEATURES  
* Low RDS(ON)=0.85  
* Single Pulse Avalanche Energy Rated  
* Rugged - SOA is Power Dissipation Limited  
* Fast Switching Speeds  
* Linear Transfer Characteristics  
* High Input Impedance  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
3
S
S
S
S
S
S
UF840L-TA3-T  
UF840L-TF1-T  
UF840L-TF2-T  
UF840L-TF3-T  
UF840L-TQ2-R  
UF840L-TQ2-T  
UF840G-TA3-T  
UF840G-TF1-T  
UF840G-TF2-T  
UF840G-TF3-T  
UF840G-TQ2-R  
UF840G-TQ2-T  
TO-220  
TO-220F1  
TO-220F2  
TO-220F  
TO-263  
G
G
G
G
G
G
D
D
D
D
D
D
Tube  
Tube  
Tube  
Tube  
Tape Reel  
Tube  
TO-263  
Note: Pin Assignment: G: Gate D: Drain S: Source  
www.unisonic.com.tw  
1 of 8  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R502-047,F  

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