Datasheet > UF1B-T

UF1B-T

更新时间： 2024-01-26 16:01:15

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	396K
描述
Rectifier Diode,

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中文翻译

获取价格

技术参数
数据手册

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UF1B-T 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.27	JESD-609代码：	e0
湿度敏感等级：	1	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

UF1B-T 数据手册

UF1A

THRU

UF1K

M C C

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20736 Marilla Street Chatsworth

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Micro Commercial Components

1 Amp Surface Mount

Super Fast

Features

For surface mounted applications

Glass passivated junction

Easy pick and place

High Temp Soldering: 260°C for 10 Seconds At Terminals

Rectifier

50 to 800 Volts

Superfast Recovery Times For High Efficiency

Maximum Ratings

DO-214AA

(SMB) (LEAD FRAME)

Operating Temperature: -50°C to +150°C

Storage Temperature: -50°C to +150°C

Maximum Thermal Resistance; 30°C/W Junction To Lead

MCC

Catalog

Number

Device

Marking

Maximum

Reccurrent

Peak Reverse

Voltage

50V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

50V

UF1A

UF1B

UF1D

UF1G

UF1J

UF1K

UF1A

UF1B

UF1D

UF1G

UF1J

UF1K

35V

100V

200V

400V

600V

70V

100V

140V

280V

420V

560V

200V

400V

600V

800V

DIMENSIONS

Electrical Characteristics @ 25°C Unless Otherwise Specified

INCHES

MIN

.083

.075

.002

-----

.030

.065

.200

.160

.130

MIN

2.11

1.91

.05

-----

.76

1.65

5.08

4.06

3.30

Average Forward

Current

I_F(AV)

1.0A

T_L= 100°C

DIM

MAX

.096

.083

.008

.02

.050

.091

.220

.185

.155

MAX

2.44

2.11

.20

NOTE

Peak Forward Surge

Current

I_FSM

30A

8.3ms, half sine

.51

1.27

2.32

5.59

4.70

3.94

Maximum Instantaneous

Forward Voltage

UF1A-D

UF1G

UF1J-K

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

1.0V

1.4V

1.7V

V_F

I_R

I_FM= 1.0A;

T_J= 25°C*

SUGGESTED SOLDER

PAD LAYOUT

0.085"

10mA T_A= 25°C

100mA T_A= 125°C

0.095”

Maximum Reverse

Recovery Time

UF1A-G

T_rr

50ns

I_F=0.5A, I_R=1.0A,

UF1J-K

100ns

I_rr=0.25A

0.075”

Typical Junction

Capacitance

C_J

17pF

Measured at

1.0MHz, V_R=4.0V

*Pulse test: Pulse width 200 msec, Duty cycle 2%

www.mccsemi.com

Revision: 3

2003/04/30

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