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UF1A PDF预览

UF1A

更新时间: 2024-02-12 18:23:20
品牌 Logo 应用领域
TSC 整流二极管高效整流二极管
页数 文件大小 规格书
2页 173K
描述
1.0 AMP. Glass Passivated High Efficient Rectifiers

UF1A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.71配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大重复峰值反向电压:1000 V最大反向恢复时间:0.1 µs
表面贴装:YES端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:10

UF1A 数据手册

 浏览型号UF1A的Datasheet PDF文件第2页 
UF1A - UF1M  
1.0 AMP. Glass Passivated High Efficient Rectifiers  
DO-41 / DO-204AL  
Features  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V0  
Ideally suited for use in very high frequency  
switching power supplies, inverters and as free  
wheeling diodes  
Glass passivated chip junction  
Excellent high temperature switching  
Ultrafast recovery time for high efficiency  
Soft recovery characteristics  
High temperature soldering guaranteed:  
o
260 C/10 seconds/.375”,(9.5mm) lead  
lengths at 5 lbs., (2.3kg) tension  
Mechanical Data  
Case: JEDEC DO-204AL molded plastic body over  
passivated chip  
Dimensions in inches and (millimeters)  
Terminals: Pure tin plated, lead free, solderable per  
MIL-STD-750, Method 2026  
Polarity: Color band denotes cathode  
Mounting Position: Any  
Weight: 0.012 ounce, 0.34 gram  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Type Number  
Symbol UF1A UF1B UF1D UF1G UF1J UF1K UF1M Units  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800 1000  
560 700  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
100  
800 1000  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current .375 (9.5mm) Lead Length  
I(AV)  
1.0  
30  
A
o
@TA = 55 C  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
IFSM  
A
V
Maximum Instantaneous Forward Voltage  
@ 1.0A  
VF  
IR  
1.0  
1.7  
o
Maximum DC Reverse Current @ TA=25 C  
5.0  
uA  
uA  
o
at Rated DC Blocking Voltage @ TA=125 C  
150  
Maximum Reverse Recovery Time ( Note 1 )  
Typical Junction Capacitance ( Note 2 )  
Typical Thermal Resistance (Note 3)  
Trr  
Cj  
50  
75  
nS  
pF  
17  
60  
15  
R
θJA  
o
C/W  
R
θJL  
o
Operating/Storage Temperature Range  
TJ, TSTG  
-55 to + 150  
C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.  
3. Thermal Resistance from junction to ambient and from Junction to Lead length .375” (9.5mm),  
Mounted on 0.2” x 0.2” (5mm x 5mm) Cu pads.  
Notes:  
Version: A06  

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