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UF16C04C-G PDF预览

UF16C04C-G

更新时间: 2024-11-21 20:54:55
品牌 Logo 应用领域
上华 - COMCHIP 局域网功效二极管
页数 文件大小 规格书
2页 46K
描述
Rectifier Diode, 1 Phase, 2 Element, 8A, 400V V(RRM), Silicon, TO-220AB,

UF16C04C-G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.29应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:125 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:400 V
最大反向电流:10 µA最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

UF16C04C-G 数据手册

 浏览型号UF16C04C-G的Datasheet PDF文件第2页 
Glass Passivated Ultra Fast Recovery Rectifier  
UF16C01C-G THRU UF16C05C-G  
Voltage Range 50 to 600 V  
Current 16.0 Ampere  
Features  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
TO-220AB  
.185(4.70)  
.175(4.44)  
DIA  
MAX.412(10.5)  
.055(1.40)  
.045(1.14)  
.154(3.91)  
.148(3.74)  
.594(15.1)  
.587(14.9)  
Low reverse leakage current  
PIN  
High surge current capability  
Mechanical Data  
Case: Molded plastic TO-220AB  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
1
2 3  
.16(4.06)  
.14(3.56)  
.56(14.22)  
.53(13.46)  
.11(2.79)  
.10(2.54)  
.037(0.94)  
.027(0.68)  
.105(2.67)  
.095(2.41)  
.025(0.64)  
.014(0.35)  
1
3
case  
2
Polarity:Color band denotes cathode  
Mounting position: Any  
Dimensions in inches and (millimeters)  
Weight: 2.24 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
o
Rating at 25  
C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UF  
UF  
UF  
UF  
UF  
UNIT  
SYMBOL  
16C01C-G 16C02C-G 16C03C-G 16C04C-G 16C05C-G  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified  
Current TC=100oC  
16.0  
A
A
V
IF(AV)  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
125  
Maximum Instantaneous Forward Voltage  
@ 8.0 A  
VF  
IR  
1.0  
1.3  
1.7  
75  
Maximum DC Reverse Current @TJ=25oC  
At Rated DC Blocking Voltage @TJ=125oC  
uA  
uA  
10.0  
250  
nS  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
CJ  
50  
pF  
oCW  
65  
R JC  
2.2  
Operating Junction and Storage  
Temperature Range  
oC  
-55 to +150  
TJ, TSTG  
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
COMCHIP TECHNOLOGY 4115 CLIPPER CT. FREMONT CA 94538 TEL: (510) 657-8671 FAX: (510) 657-8921  

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