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UF16C10D PDF预览

UF16C10D

更新时间: 2024-11-12 01:08:39
品牌 Logo 应用领域
THINKISEMI 二极管
页数 文件大小 规格书
2页 266K
描述
16.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers

UF16C10D 数据手册

 浏览型号UF16C10D的Datasheet PDF文件第2页 
UF16C20D thru UF16C60D  
UF16C20D/UF16C40D/UF16C60D  
Pb Free Plating Product  
16.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers  
TO-220AB/TO-220-3L  
Unit:inch(mm)  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
ThinkiSemi latest&matured process FRD/FRED  
.139(3.55)  
MIN  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.054(1.39)  
.045(1.15)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Car Audio Amplifiers and Sound Device Systems  
Plating Power Supply,Motor Control,UPS and SMPS etc.  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
.1(2.54)  
.1(2.54)  
Case: Open Metal Package TO-220AB/TO-220-3L  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202 method 208  
Polarity: As marked on diode body  
Mounting position: Any  
Case  
Case  
Case  
Case  
Weight: 2.2 gram approximately  
Doubler  
Tandem Polarity  
Suffix "D"  
Series  
Tandem Polarity  
Suffix "S"  
Negative  
Common Anode  
Suffix "A"  
Positive  
Common Cathode  
Suffix "C"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
UF16C10D  
UF16C20D  
UF16C30D  
UF16C40D  
UF16C50D  
UF16C60D  
PARAMETER  
SYMBOL  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current Tc=100°C  
16.0  
160  
IF(AV)  
IFSM  
VF  
A
A
V
(Total Device 2x8.0A=16.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)  
(Per Diode/Per Leg)  
Maximum Instantaneous Forward Voltage  
@8.0A  
0.85-0.95  
1.00-1.25  
1.25-1.50  
(Per Diode/Per Leg)  
Maximum DC Reverse Current @TJ=25°C  
At Rated DC Blocking Voltage @TJ=125°C  
1.0  
5.0  
μA  
μA  
IR  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
25-35  
80  
Trr  
CJ  
nS  
pF  
1.5  
RθJC  
°C/W  
Operating Junction and Storage  
Temperature Range  
-55 to +175  
TJ,TSTG  
°C  
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  

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