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UCC27511DBVR

更新时间： 2024-02-26 05:13:30
品牌 Logo 应用领域
德州仪器 - TI 驱动器栅极栅极驱动
页数 文件大小 规格书
24页 1191K
描述
Single Channel High-Speed, Low-Side Gate Driver

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UCC27511DBVR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOT-23
包装说明：SOT-23, 6 PIN针数：6
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：6 weeks
风险等级：1.69Samacsys Confidence：4
Samacsys Status：ReleasedSamacsys PartID：418357
Samacsys Pin Count：6Samacsys Part Category：Transistor
Samacsys Package Category：SOT23 (6-Pin)Samacsys Footprint Name：DBV (R-PDSO-G6)
Samacsys Released Date：2017-06-07 19:46:01Is Samacsys：N
高边驱动器：NO接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：R-PDSO-G6JESD-609代码：e4
长度：2.9 mm湿度敏感等级：1
功能数量：1端子数量：6
最高工作温度：140 °C最低工作温度：-40 °C
最大输出电流：8 A标称输出峰值电流：8 A
输出极性：TRUE AND INVERTED封装主体材料：PLASTIC/EPOXY
封装代码：LSSOP封装等效代码：TSOP6,.11,37
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：260电源：12 V
认证状态：Not Qualified座面最大高度：1.45 mm
子类别：MOSFET Drivers最大供电电压：18 V
最小供电电压：4.5 V标称供电电压：12 V
表面贴装：YES技术：BICMOS
温度等级：AUTOMOTIVE端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：0.95 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
断开时间：0.03 µs接通时间：0.03 µs
宽度：1.6 mmBase Number Matches：1

UCC27511DBVR 数据手册

 浏览型号UCC27511DBVR的Datasheet PDF文件第1页浏览型号UCC27511DBVR的Datasheet PDF文件第2页浏览型号UCC27511DBVR的Datasheet PDF文件第4页浏览型号UCC27511DBVR的Datasheet PDF文件第5页浏览型号UCC27511DBVR的Datasheet PDF文件第6页浏览型号UCC27511DBVR的Datasheet PDF文件第7页 
UCC27511  
www.ti.com  
SLUSAW9B –FEBRUARY 2012–REVISED MARCH 2012  
ABSOLUTE MAXIMUM RATINGS(1)(2)(3)  
over operating free-air temperature range (unless otherwise noted)  
MIN  
MAX  
UNIT  
Supply voltage range  
OUTH voltage  
VDD  
-0.3  
20  
-0.3 VDD + 0.3  
V
OUTL voltage  
-0.3  
20  
0.3  
0.6  
4
IOUT_DC (source)  
IOUT_DC (sink)  
Output continuous current  
(OUTH source current and OUTL sink current)  
A
V
IOUT_pulsed(source)  
IOUT_pulsed(sink)  
Output pulsed current (0.5 µs)  
(OUTH source current and OUTL sink current)  
8
IN+, IN-(4)  
-0.3  
20  
Human Body Model, HBM  
2000  
ESD  
Charged Device Model, CDM SOT-  
23  
500  
Operating virtual junction temperature range, TJ  
Storage temperature range, TSTG  
-40  
-65  
150  
150  
300  
260  
°C  
Soldering, 10 sec.  
Reflow  
Lead temperature  
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings  
only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating  
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) All voltages are with respect to GND unless otherwise noted. Currents are positive into, negative out of the specified terminal. See  
Packaging Section of the datasheet for thermal limitations and considerations of packages.  
(3) These devices are sensitive to electrostatic discharge; follow proper device handling procedures.  
(4) Maximum voltage on input pins is not restricted by the voltage on the VDD pin.  
THERMAL INFORMATION  
UCC27511  
THERMAL METRIC(1)  
SOT-23 (DBV)  
6 PINS  
217.8  
UNITS  
θJA  
Junction-to-ambient thermal resistance(2)  
Junction-to-case (top) thermal resistance(3)  
Junction-to-board thermal resistance(4)  
θJCtop  
θJB  
137.7  
67.4  
°C/W  
ψJT  
ψJB  
Junction-to-top characterization parameter(5)  
Junction-to-board characterization parameter(6)  
60.4  
66.8  
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.  
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as  
specified in JESD51-7, in an environment described in JESD51-2a.  
(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-  
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.  
(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB  
temperature, as described in JESD51-8.  
(5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted  
from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).  
(6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted  
from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7).  
Copyright © 2012, Texas Instruments Incorporated  
Submit Documentation Feedback  
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Product Folder Link(s): UCC27511  
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