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UCC27512-EP PDF预览

UCC27512-EP

更新时间: 2023-06-19 15:33:25
品牌 Logo 应用领域
德州仪器 - TI 栅极驱动驱动器
页数 文件大小 规格书
32页 1607K
描述
具有 5V UVLO、采用 SON 封装的增强型产品 4A/8A 单通道栅极驱动器

UCC27512-EP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SON
包装说明:HVSON, SOLCC6,.11,37针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:6 weeks
风险等级:1.63高边驱动器:NO
接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVERJESD-30 代码:S-PDSO-N6
JESD-609代码:e4长度:3 mm
湿度敏感等级:2功能数量:1
端子数量:6最高工作温度:140 °C
最低工作温度:-40 °C最大输出电流:8 A
标称输出峰值电流:8 A输出极性:TRUE AND INVERTED
封装主体材料:PLASTIC/EPOXY封装代码:HVSON
封装等效代码:SOLCC6,.11,37封装形状:SQUARE
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):260
电源:12 V认证状态:Not Qualified
座面最大高度:0.8 mm子类别:MOSFET Drivers
最大供电电压:18 V最小供电电压:4.5 V
标称供电电压:12 V表面贴装:YES
技术:BICMOS温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子节距:0.95 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:0.03 µs
接通时间:0.03 µs宽度:3 mm
Base Number Matches:1

UCC27512-EP 数据手册

 浏览型号UCC27512-EP的Datasheet PDF文件第2页浏览型号UCC27512-EP的Datasheet PDF文件第3页浏览型号UCC27512-EP的Datasheet PDF文件第4页浏览型号UCC27512-EP的Datasheet PDF文件第5页浏览型号UCC27512-EP的Datasheet PDF文件第6页浏览型号UCC27512-EP的Datasheet PDF文件第7页 
UCC27511  
UCC27512  
www.ti.com  
SLUSAW9C FEBRUARY 2012REVISED JUNE 2012  
Single Channel High-Speed, Low-Side Gate Driver  
(with 4-A Peak Source and 8-A Peak Sink)  
Check for Samples: UCC27511, UCC27512  
1
FEATURES  
APPLICATIONS  
Low-Cost, Gate-Driver Device Offering  
Superior Replacement of NPN and PNP  
Discrete Solutions  
Switch-Mode Power Supplies  
DC-to-DC Converters  
Companion Gate Driver Devices for Digital  
Power Controllers  
4-A Peak Source and 8-A Peak Sink  
Asymmetrical Drive  
Solar Power, Motor Control, UPS  
Strong Sink Current Offers Enhanced  
Immunity Against Miller Turn On  
Gate Driver for Emerging Wide Band-Gap  
Power Devices (such as GaN)  
Split Output Configuration (allows easy and  
independent adjustment of turn-on and turn-  
off speeds) in the UCC27511  
DESCRIPTION  
The UCC27511 and UCC27512 single-channel, high-  
speed, low-side gate driver device is capable of  
effectively driving MOSFET and IGBT power  
switches. Using a design that inherently minimizes  
shoot-through current, UCC27511 and UCC27512  
are capable of sourcing and sinking high, peak-  
current pulses into capacitive loads offering rail-to-rail  
drive capability and extremely small propagation  
delay typically 13 ns.  
Fast Propagation Delays (13-ns typical)  
Fast Rise and Fall Times (9-ns and 7-ns  
typical)  
4.5-V to 18-V Single Supply Range  
Outputs Held Low During VDD UVLO (ensures  
glitch free operation at power-up and power-  
down)  
TTL and CMOS Compatible Input Logic  
Threshold, (independent of supply voltage)  
The UCC27511 and UCC27512 provides 4-A source,  
8-A sink (asymmetrical drive) peak-drive current  
capability. Strong sink capability in asymmetrical drive  
boosts immunity against parasitic, Miller turn-on  
effect. The UCC27511 device also features a unique  
split output configuration where the gate-drive current  
is sourced through OUTH pin and sunk through  
OUTL pin. This unique pin arrangement allows the  
user to apply independent turn-on and turn-off  
resistors to the OUTH and OUTL pins respectively  
and easily control the switching slew rates.  
Hysteretic Logic Thresholds for High Noise  
Immunity  
Dual Input Design (choice of an inverting (IN-  
pin) or non-inverting (IN+ pin) driver  
configuration)  
Unused Input Pin can be Used for Enable  
or Disable Function  
Output Held Low when Input Pins are Floating  
UCC27511 and UCC27512 are designed to operate  
over a wide VDD range of 4.5 V to 18 V and wide  
temperature range of -40°C to 140°C. Internal Under  
Voltage Lockout (UVLO) circuitry on VDD pin holds  
output low outside VDD operating range. The  
capability to operate at low voltage levels such as  
below 5 V, along with best in class switching  
characteristics, is especially suited for driving  
emerging wide band-gap power switching devices  
such as GaN power semiconductor devices.  
Input Pin Absolute Maximum Voltage Levels  
Not Restricted by VDD Pin Bias Supply  
Voltage  
Operating Temperature Range of -40°C to  
140°C  
6-Pin DBV (SOT-23) and 6-Pin DRS (3mm x 3  
mm WSON with exposed thermal pad)  
Package Options  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2012, Texas Instruments Incorporated  
 
 

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