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UCC27511A-Q1_15 PDF预览

UCC27511A-Q1_15

更新时间： 2022-02-26 11:36:26
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德州仪器 - TI 栅
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31页 1245K
描述
Single-Channel High-Speed Low-Side Gate Driver With 4-A Peak Source and 8-A Peak Sink

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UCC27511A-Q1_15 数据手册

 浏览型号UCC27511A-Q1_15的Datasheet PDF文件第1页浏览型号UCC27511A-Q1_15的Datasheet PDF文件第2页浏览型号UCC27511A-Q1_15的Datasheet PDF文件第3页浏览型号UCC27511A-Q1_15的Datasheet PDF文件第5页浏览型号UCC27511A-Q1_15的Datasheet PDF文件第6页浏览型号UCC27511A-Q1_15的Datasheet PDF文件第7页 
UCC27511A-Q1  
SLVSCO2A –AUGUST 2014–REVISED SEPTEMBER 2014  
www.ti.com  
7 Specifications  
7.1 Absolute Maximum Ratings(1)(2)(3)  
over operating free-air temperature range (unless otherwise noted)  
MIN  
–0.3  
–6  
MAX  
20  
UNIT  
Supply voltage  
Input voltage  
VDD  
IN+, IN–(4)  
20  
VDD  
0.3  
+
OUTH  
OUTL  
–0.3  
V
Output voltage  
DC  
–0.3  
–2  
20  
20  
Repetitive pulse less than 200 ns(5)  
IO_DC (source)  
IO_DC (sink)  
0.3  
0.6  
4
Output continuous current  
(OUTH source current and OUTL sink current)  
A
IO_pulsed(source)  
IO_pulsed(sink)  
Output pulsed current (0.5 µs)  
(OUTH source current and OUTL sink current)  
8
Operating virtual junction temperature range, TJ  
Lead temperature  
–40  
150  
300  
260  
Soldering, 10 sec.  
Reflow  
°C  
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings  
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating  
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) All voltages are with respect to GND unless otherwise noted. Currents are positive into and negative out of the specified terminal. See  
the Thermal Information section for thermal limitations and considerations of packages.  
(3) These devices are sensitive to electrostatic discharge; follow proper device handling procedures.  
(4) Maximum voltage on input pins is not restricted by the voltage on the VDD pin.  
(5) Values are verified by characterization on bench.  
7.2 Handling Ratings  
MIN  
–65  
MAX  
150  
UNIT  
Tstg  
Storage temperature range  
°C  
Human body model (HBM), per AEC Q100-002(1)  
–4000  
–1000  
4000  
1000  
Electrostatic  
discharge  
V(ESD)  
V
Charged device model (CDM), per AEC Q100-011  
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.  
7.3 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
MIN  
4.5  
–5  
NOM  
12  
MAX UNIT  
VDD  
VI  
Supply voltage  
18  
18  
V
V
Input voltage, IN+ and IN–  
Operating junction temperature range  
TA  
–40  
140  
°C  
7.4 Thermal Information  
DBV  
THERMAL METRIC(1)  
UNIT  
6 PINS  
217.8  
97.6  
RθJA  
RθJC(top)  
RθJB  
ψJT  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
72.2  
°C/W  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
8.6  
ψJB  
71.6  
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.  
4
Submit Documentation Feedback  
Copyright © 2014, Texas Instruments Incorporated  
Product Folder Links: UCC27511A-Q1  
 
 
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